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Vishay Siliconix |
Load Switch with Level-Shift D 105-mW Low rDS(on) TrenchFETt D 2.5 to 12-V Input D 1.5 to 8-V Logic Level Control DESCRIPTION The Si3863DV includes a p- and n-channel MOSFET in a single TSOP-6 package. The low on-resistance p-channel TrenchFETR is tailored for use as a load swi |
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Vishay |
P-Channel MOSFET -00 t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 45 90 25 Maximum 62.5 110 30 Unit _C/W www.vishay.com 2-1 Si3433 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condi |
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Vishay |
N-Channel MOSFET • Halogen free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC 3 mm TSOP-6 Top View 16 25 34 2.85 mm Ordering Information: Si3456BDV-T1-E3 (Lead (Pb)-free) Si3456BDV-T1- |
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Vishay |
P-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Active Clamp Circuits in DC/DC Power Supplies S 3 mm D G 25 34 2.85 mm D S Marking C |
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Vishay Siliconix |
P-Channel MOSFET 3 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 45 90 25 Maximum 62.5 110 30 Unit _C/W 1 Si3435DV Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gat |
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Vishay Siliconix |
N-Channel 2.5-V (G-S) MOSFET ttp://www.vishay.com/www/product/spice.htm Document Number: 72504 S-40424—Rev. C, 15-Mar-04 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 75 120 70 Maximum 100 145 85 Unit _C/W 1 Si3442BDV Vishay Siliconix SPEC |
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Vishay Siliconix |
P-Channel 12-V (D-S) MOSFET ID (A) -7.9 - 7.0 - 5.9 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra Low On-Resistance APPLICATIONS D Load Switch D PA Switch (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D P-Channel MOSFET 2.85 mm ABSOLUTE MAXIMUM RATINGS (TA |
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Vishay Siliconix |
P-Channel 20-V (D-S) MOSFET With Schottky Diode 0-5600 TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C Symbol VDS VKA VGS ID IDM IS IF IFM 5 sec –20 20 "12 "1.8 "1.5 "7 –1.05 0.5 7 1.15 0.73 1.0 0.64 Steady State Unit V "12 "1.6 "1.2 A –0.75 0.83 0.53 0.76 0.48 –55 to |
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Vishay |
P-Channel 12 V (D-S) MOSFET • TrenchFET® Gen III p-channel power MOSFET • RDS(on) rating at VGS = -1.8 V • 100 % Rg and UIS tested • Material categorization: for definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS • Load switch • PA switch |
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Vishay |
N-Channel MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. 0.027 at VGS = 10 V 0.030 at VGS = 4.5 V 0.049 at VGS = 2.5 V TSOP-6 Top View D 1 6 D ID (A) 8d 7.5 6.1 a Qg (Typ.) 4.3 nC • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: |
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Vishay |
MOSFET • TrenchFET® power MOSFET • 100 % Rg tested • Built-in ESD protection - Typical ESD performance 3000 V • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Power management for portable and cons |
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Vishay |
MOSFET • TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • Load Switch for Portable Devices RoHS COMPLIANT TSOP-6 Top View D 3 mm D G 16 25 34 2.85 mm D D S Marking Code YY AG XX Lot Traceability and Date Code Part # Code Ordering Informat |
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Vishay |
MOSFET • TrenchFET® power MOSFET • PWM optimized • 100 % Rg tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Hard disk drives • DC/DC converter • Load switch • Portable devices (3) G (4) S |
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Vishay Siliconix |
N-channel MOSFET ID (A) 2.4 2.3 rDS(on) (W) 0.170 @ VGS = 10 V 0.185 @ VGS = 6.0 V D High-Efficiency PWM Optimized D 100% Rg Tested TSOP-6 Top View 1 3 mm 6 5 (3) G 3 4 (1, 2, 5, 6) D 2 2.85 mm (4) S Ordering Information: Si3430DV-T1 N-Channel MOSFET ABSOLUTE |
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Vishay Siliconix |
N-channel MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.034 @ VGS = 4.5 V 0.050 @ VGS = 2.5 V ID (A) 6.1 5.0 D TrenchFETr Power MOSFET D 2.5-V Rating for 30-V N-Channel D Low rDS(on) for Footprint Area APPLICATIONS D Li-lon Battery Protection (1, 2, 5, 6) D T |
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Vishay Siliconix |
P-Channel 12-V (D-S) MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET: 1.8 V Rated • Ultra Low On-Resistance • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch 3 mm TSOP-6 Top View 16 25 (4) S (3) G 34 2.85 |
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Vishay Siliconix |
N-Channel 30-V (D-S) MOSFET ID (A) 4.5 3.8 rDS(on) (W) 0.060 @ VGS = 10 V 0.085 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 100% Rg Tested TSOP-6 Top View (1, 2, 5, 6) D 1 3 mm 6 5 2 3 4 (3) G 2.85 mm Ordering Information: Si3454ADV-T1 Si3454ADV-T1—E3 (Lead Free) Marking |
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Vishay Siliconix |
P-Channel 30-V (D-S) MOSFET S-40424—Rev. C, 15-Mar-04 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 50 90 30 Maximum 62.5 110 36 Unit _C/W 1 Si3455ADV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gat |
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Vishay Siliconix |
P-Channel 30-V (D-S) MOSFET 2019 S-40424—Rev. D, 15-Mar-04 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 53 90 25 Maximum 62.5 110 36 Unit _C/W 1 Si3457BDV Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static |
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Vishay Siliconix |
Complementary MOSFET Half-Bridge (N- and P-Channel) Unit _C/W For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70778 S-55457—Rev. B, 09-Mar-98 www.vishay.com S FaxBack 408-970-5600 2-1 Si3850DV Vishay Siliconix SPECIFICATIONS (TJ = 25 |
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