| No. | Partie # | Fabricant | Description | Fiche Technique |
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Vishay |
Zener Diode • Silicon planar power Zener diodes • For use in stabilizing and clipping circuits with high power rating • The Zener voltages are graded according to the international E 24 standard. Replace suffix “C” with “B” for ± 2 % tolerance • AEC-Q101 qualifi |
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Vishay Siliconix |
1.0A RECTIFIER • Low forward voltage drop • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF |
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Vishay |
N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • High-Efficient PWM Optimized • 100 % UIS and Rg Tested S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D Ordering Information: Si4800BDY-T1-E3 (Lead (Pb)-free) Si4800BDY-T1-GE3 |
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Vishay |
SMD Wraparound Ultra Low Value Thin Film Resistors • NiCr + Ta2O5 resistive layer • Pre-soldered or gold terminations • No inductance for high frequency applications • Alumina substrates for high power handling capability • Resistance range: 0.1 to 9.99 Available Available • TCR down to 50 pp |
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Vishay Telefunken |
Optocoupler • Isolation test voltage 5000 VRMS • Interfaces with common logic families • Input-output coupling capacitance < 0.5 pF • Industry standard dual-in-line 6 pin package • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLI |
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Vishay |
(MC78xxCT) 3-Terminal Fixed Positive Voltage Regulator • Output current in excess of 1.0 ampere • No external components required • Internal thermal overload protection • Internal short-circuit current limiting • Output transistor safe-area compensation • Output voltage offered in 2% tolerance Cin 0.33µ |
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Vishay |
Power MOSFET • Low figure-of-merit Ron x Qg • 100 % avalanche tested • High peak current capability • dv/dt ruggedness • Improved Trr/Qrr • Improved gate charge Available • High power dissipations capability • Material categorization: for definitions of com |
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Vishay Siliconix |
Matched N-Channel JFET D Two-Chip Design D High Slew Rate D Low Offset/Drift Voltage D Low Gate Leakage: 3 pA D Low Noise: 12 nV⁄√Hz @ 10 Hz D Good CMRR: 76 dB D Minimum Parasitics BENEFITS D Tight Differential Match vs. Current D Improved Op Amp Speed, Settling Time Accu |
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Vishay |
Optocoupler A C NC 1 2 3 6 B 5 C 4 E • Isolation test voltage 5000 VRMS • Interfaces with common logic families • Input-output coupling capacitance < 0.5 pF • Industry standard dual-in-line 6 pin package • Compliant to RoHS directive 2002/95/EC and in accordanc |
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Vishay |
Inductors • High temperature rating, up to 155 °C • Shielded construction • Frequency range up to 750 kHz • Lowest DCR/μH, in this package size • Handles high transient current spikes without saturation • Ultra low buzz noise, due to composite construction • I |
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Vishay |
Aluminum Capacitor • Temperature range -55 °C to +105 °C • Long life Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 QUICK REFERENCE DATA DESCRIPTION VALUE Nominal case size Ø D x L in mm 0.625" x 1.125 |
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Vishay |
Aluminum Capacitor • Life test 2000 h at +125 °C • Wide temperature range • Foil tantalum replacement Available • Unique Teflon end seal for long life • High vibration capability • Material categorization: for definitions of compliance please see www.vishay.com/ |
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Vishay |
Glass Passivated Junction Plastic Rectifier • Superectifier structure for high reliability application • Cavity-free glass-passivated pallet chip junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s |
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Vishay |
Integrated Power Stage high current driving capability, adaptive dead-time control, an integrated bootstrap Schottky diode, and zero current detect to improve light load efficiency. The driver is also compatible with a wide range of PWM controllers, supports tri-state PWM, |
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Vishay Siliconix |
Dual N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC D1 G1 A/S2 A/S2 G2 1 2 3 4 SO-8 8 D1 7 D2/S1 6 D2/S1 5 D2/S1 Top View Ordering Information: Si4816 |
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Vishay Siliconix |
Phase Control SCR 2 (A) The 40TPS...A High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperat |
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Vishay |
Power MOSFET • Dynamic dV/dt rating • Repetitive avalanche rated Available • 175 °C operating temperature • Fast switching Available • Ease of paralleling • Simple drive requirements Available • Material categorization: for definitions of compliance pleas |
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Vishay |
Fast Sinterglass Diode • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Fast switching for high efficiency • 3.0 ampere operation at Tamb = 50 °C with no ther- mal runaway • Hermetically sealed package Mechanical Data Case: |
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Vishay |
N-Channel JFETs D Low Cutoff Voltage: J201 <1.5 V D High Input Impedance D Very Low Noise D High Gain: AV = 80 @ 20 mA BENEFITS D Full Performance from Low Voltage Power Supply: Down to 1.5 V D Low Signal Loss/System Error D High System Sensitivity D High Quality L |
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Vishay Telefunken |
Reflective Optical Sensor • Package type: leaded • Detector type: phototransistor • Dimensions (L x W x H in mm): 10.2 x 5.8 x 7 • Peak operating distance: 2.5 mm • Operating range within > 20 % relative collector current: 0.2 mm to 15 mm • Typical output current under test: |
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