| No. | Partie # | Fabricant | Description | Fiche Technique |
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Vishay Intertechnology |
P-Channel 30-V (D-S) MOSFET ID (A) - 60d - 60d Qg (Typ.) 129 nC PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) 0.0026 at VGS = - 10 V 0.00375 at VGS = - 4.5 V PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UI |
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Vishay Intertechnology |
N-Channel 40-V (D-S) Fast Switching MOSFET ID (A) 23.6 rDS(on) (W) 0.0061 @ VGS = 10 V Qg (Typ) 105 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested D High Threshold Voltage At High Temperature PowerPAK SO-8 6.15 mm S 1 2 |
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Vishay Intertechnology |
Dual N-Channel 60-V (D-S) MOSFET ID (A) 9.6 rDS(on) (W) 0.023 @ VGS = 10 V Qg (Typ) 43 D D D D D TrenchFETr Power MOSFET New Low Thermal Resistance PowerPAKr Package Dual MOSFET for Space Savings 100% Rg Tested High Threshold Voltage At High Temperature PowerPAK SO-8 D1 6.15 mm |
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