No. | Partie # | Fabricant | Description | Fiche Technique |
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Vishay Intertechnology |
SU50N02409PU54A ID (A)d 80 64 rDS(on) (W) 0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency APPLICATIONS D Synchronous Buck DC/DC Conversion - Desktop - Server D TO-252 G Drain Co |
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Vishay Intertechnology |
N-Channel Enhancement-Mode MOSFET • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Sou |
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