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Vishay Intertechnology 50N DataSheet

No. Partie # Fabricant Description Fiche Technique
1
50N02409PU54A

Vishay Intertechnology
SU50N02409PU54A
ID (A)d 80 64 rDS(on) (W) 0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency APPLICATIONS D Synchronous Buck DC/DC Conversion - Desktop - Server D TO-252 G Drain Co
Datasheet
2
GFB50N03

Vishay Intertechnology
N-Channel Enhancement-Mode MOSFET

• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Low Voltage DC/DC Converters
• Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (T Parameter Drain-Sou
Datasheet



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