| No. | Partie # | Fabricant | Description | Fiche Technique |
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Vishay |
Haptic Feedback Actuator • High impulse vibrations for clear tactile feedback in noisy environments • Drives 0.5 kg load to 6 g’s of acceleration with 12 V, 5 ms pulse (tested with Vishay’s custom spring return fixture) • Standard lead termination is dipped 100 % tin solder; |
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Vishay |
Haptic Feedback Actuator • High impulse vibrations for clear tactile feedback in noisy environments • Drives 0.5 kg load to 6 g’s of acceleration with 12 V, 5 ms pulse (tested with Vishay’s custom spring return fixture) • Standard lead termination is dipped 100 % tin solder; |
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Vishay |
Haptic Feedback Actuator • High impulse vibrations for clear tactile feedback in noisy environments • Drives 0.5 kg load to 6 g’s of acceleration with 12 V, 5 ms pulse (tested with Vishay’s custom spring return fixture) • Standard lead termination is dipped 100 % tin solder; |
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Vishay |
Haptic Feedback Actuator • High impulse vibrations for clear tactile feedback in noisy environments • Drives 0.5 kg load to 6 g’s of acceleration with 12 V, 5 ms pulse (tested with Vishay’s custom spring return fixture) • Standard lead termination is dipped 100 % tin solder; |
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Vishay |
Haptic Feedback Actuator • High impulse vibrations for clear tactile feedback in noisy environments • Drives 0.5 kg load to 6 g’s of acceleration with 12 V, 5 ms pulse (tested with Vishay’s custom spring return fixture) • Standard lead termination is dipped 100 % tin solder; |
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Vishay |
Power MOSFET • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please se |
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Vishay |
Power MOSFET • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please se |
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Vishay |
Power MOSFET • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Kelvin connection for reduced gate noise • Material categorizati |
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Vishay |
Power MOSFET • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg • Low input capacitance (Ciss) • Increased robustness due to low Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • M |
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Vishay |
D Series Power MOSFET • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness Available - Avalanche energy rated (UIS) • Optimal efficiency and operation - Low cost - Sim |
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Vishay Siliconix |
Power MOSFET 560 V VGS = 10 V 48 12 15 Single D • Low Figure-of-Merit Ron x Qg 0.555 • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC G D S GD S D2PAK (TO-263) G S G D S N-Channel MOSFET ORDERI |
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Vishay |
Power MOSFET • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of Available compliance please se |
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Vishay |
Power MOSFET • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) Available • Material categorization: for definitions of compliance please s |
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Vishay |
Power MOSFET • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) Available • Material categorization: for definitions of compliance please s |
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Vishay |
Power MOSFET • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) Available • Material categorization: for definitions of compliance please s |
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Vishay |
Power MOSFET • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) Available • Material categorization: for definitions of compliance please s |
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Vishay |
Power MOSFET • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please se |
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Vishay |
Power MOSFET • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Kelvin connection for reduced gate noise • Material categorizati |
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Vishay Siliconix |
Power MOSFET • Low Figure-of-Merit Ron x Qg • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC Note * Pb containing terminations are not RoHS compliant, exemptions may apply S D G D2PAK (TO-263) GDS G G |
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Vishay |
E Series Power MOSFET • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) Available • Material categorization: for definitions of compliance please |
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