No. | Partie # | Fabricant | Description | Fiche Technique |
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Vishay |
Glass Passivated Junction Plastic Rectifier • Superectifier structure for high reliability application • Cavity-free glass-passivated pallet chip junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s |
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Vishay |
Fast Sinterglass Diode • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Fast switching for high efficiency • 3.0 ampere operation at Tamb = 50 °C with no ther- mal runaway • Hermetically sealed package Mechanical Data Case: |
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Vishay Telefunken |
Dual Common Cathode Ultrafast Rectifier • Power pack Available • Glass passivated pellet chip junction • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum p |
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Vishay |
Small Signal Fast Switching Diodes • Silicon epitaxial planar diode • Electrically equivalent diodes: 1N4148 - 1N914 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Extreme fast switches Models Available MECHANICAL DATA Case |
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Vishay Siliconix |
N-Channel 60-V (D-S) Fast Switching MOSFET an exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the |
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Vishay |
Surface Mount Ultrafast Avalanche Rectifiers • Very low profile - typical height of 1.0 mm Available • Ideal for automated placement • Glass passivated pellet chip junction • Ultrafast recovery times for high frequency • Low reverse current • Meets MSL level 1, per J-STD-020, LF maximum |
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Vishay |
Ultrafast Avalanche SMD Rectifier • Low profile package Available • Ideal for automated placement • Glass passivated pellet chip junction • Low reverse current • Soft recovery characteristics • Ultrafast reverse recovery time • Meets MSL level 1, per J-STD-020, LF maximum pea |
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Vishay |
Glass Passivated Junction Fast Switching Plastic Rectifier • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.1 μA • High forward surge capability • Solder dip 275 °C max. 10 s, pe |
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Vishay |
High Voltage Schottky Plastic Rectifier • Guardring for overvoltage protection • Low power losses and high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 quali |
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Vishay |
Small Signal Fast Switching Diodes • Silicon epitaxial planar diode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Extreme fast switches ADDITIONAL RESOURCES 3D 3D 3D Models MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: ap |
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Vishay |
Ultrafast Avalanche SMD Rectifier • Low profile package Available • Ideal for automated placement • Glass passivated pellet chip junction • Low reverse current • Low forward voltage • Soft recovery characteristic • Ultra fast reverse recovery time • Meets MSL level 1, per J- |
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Vishay |
Ultrafast Avalanche SMD Rectifier • Low profile package Available • Ideal for automated placement • Glass passivated pellet chip junction • Low reverse current • Low forward voltage • Soft recovery characteristic • Ultra fast reverse recovery time • Meets MSL level 1, per J- |
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Vishay |
Fast Avalanche SMD Rectifier • Low profile package Available • Ideal for automated placement • Glass passivated pellet chip junction • Low reverse current • Soft recovery characteristic • Fast reverse recovery time • Meets MSL level 1, per J-STD-020, LF maximum peak of 2 |
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Vishay Telefunken |
Ultra-Fast Avalanche Sinterglass Diode • Glass passivated junction • Hermetically sealed package • Very low switching losses • Low reverse current • High reverse voltage • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Switched m |
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Vishay Telefunken |
Ultra Fast Recovery Silicon Power Rectifier D D D D D D Multiple diffusion Epitaxial – planar Ultra fast forward recovery time Ultra fast reverse recovery time Low reverse current Very good reverse current stability at high temperature 14282 D Low thermal resistance Applications Fast rectifi |
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Vishay Telefunken |
Fast Avalanche Sinterglass Diode D D D D Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Applications 94 9588 Very fast rectifiers and switches Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g =Repetitive peak |
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Vishay |
N-Channel 30-V (D-S) Fast Switching MOSFET • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • 100 % Rg Tested APPLICATIONS • DC/DC Conversion D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS |
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Vishay Telefunken |
Small Signal Fast Switching Diode • Silicon epitaxial planar diode • Ultra fast switching speed • Surface mount package ideally suited for automatic insertion • High conductance • AEC-Q101 qualified available • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-comp |
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Vishay |
Ultrafast Plastic Rectifier • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Low switching losses, high efficiency • High forward surge capability Available • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for D2PAK (TO-263AB) |
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Vishay Siliconix |
Surface Mount Ultrafast Rectifiers • Low profile package • Ideal for automated placement • Oxide planar chip junction • Ultrafast recovery times for high frequency • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DO-214AC (SMA) • Solder dip 260 °C, 40 s • Component in ac |
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