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Vishay Siliconix |
N-Channel 30-V (D-S) MOSFET of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specif |
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Vishay Siliconix |
SUD50N024 ID (A)d 80 64 rDS(on) (W) 0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency APPLICATIONS D Synchronous Buck DC/DC Conversion - Desktop - Server D TO-252 G Drain Co |
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Vishay Siliconix |
SUB50N02-09 PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.0095 @ VGS = 10 V 0.017 @ VGS = 4.5 V ID (A)a 20 15 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency 100% Rg Tested APPLICATIONS D High-Side Synchronous Buck DC |
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Vishay Siliconix |
SUD50N025-05P D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant APPLICATIONS D DC/DC Conversion, Low-Side − Desktop PC − Notebook PC D GDS Top View Drain Connected to Tab Ordering Information: SUD50N025-05P—E3 (Lead (Pb)-Free) G S N-Channel MOSFET A |
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Vishay Intertechnology |
SU50N02409PU54A ID (A)d 80 64 rDS(on) (W) 0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency APPLICATIONS D Synchronous Buck DC/DC Conversion - Desktop - Server D TO-252 G Drain Co |
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Vishay |
Automotive N-Channel MOSFET • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 D Drain Connected to Tab GDS Top View G N-C |
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Vishay |
Automotive N-Channel MOSFET • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested • AEC-Q101 qualified d • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Drain connected to tab G S D G Top View |
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Vishay |
N-Channel MOSFET n exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the s |
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Vishay Siliconix |
N-Channel MOSFET ID (A)b 63b 52b rDS(on) (Ω) 0.0095 @ VGS = 10 V 0.014 @ VGS = 4.5 V D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-251 D G and DRAIN-TAB G D S Top View Order Number: SUU5 |
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Vishay Siliconix |
N-Channel MOSFET • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested RoHS COMPLIANT APPLICATIONS TO-251 • Primary Side Switch • Isolated DC/DC Converter D Drain Connected to Drain-Tab G D S G Top View Ordering Information: SUU50N10-18P-E3 (Lead (Pb) |
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Vishay Siliconix |
Ultrafast IGBT • NPT Generation V IGBT technology • Square RBSOA • HEXFRED® clamping diode • Positive VCE(on) temperature coefficient • Fully isolated package SOT-227 • Speed 8 kHz to 60 kHz • Very low internal inductance ( 5 nH typical) • Industry standard outli |
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Vishay |
Automotive N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd G GDS Top View Drain Connected to Tab S N-Channel MOSFET ORDERING INFORMATIO |
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Vishay |
Power MOSFET • 4th generation E series technology • Low figure-of-merit (FOM) Ron x Qg • Low effective capacitance (Co(er)) • Reduced switching and conduction losses • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please se |
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Vishay |
Automotive N-Channel MOSFET • TrenchFET® Power MOSFET • AEC-Q101 Qualified • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 G GDS Top View Drain Connected to Tab ORDERING INFORMATION Package Lead (Pb)-fr |
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Vishay |
Automotive N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested • AEC-Q101 Qualifiedd • Compliant to RoHS Directive 2002/95/EC G GDS Top View Drain Connected to Tab S |
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Vishay |
Solid Tantalum Capacitors • Terminations: standard SnPb, 100 % tin available • Large capacitance range • Encapsulated in a hard yellow epoxy resin Available Available • Variety of lead styles available • Supplied on tape (reel or ammopack) or in bulk • Low impedance and |
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Vishay |
Solid Tantalum Capacitors • Terminations: standard SnPb, 100 % tin available • Large capacitance range • Encapsulated in a hard yellow epoxy resin Available Available • Variety of lead styles available • Supplied on tape (reel or ammopack) or in bulk • Low impedance and |
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Vishay |
Solid Tantalum Capacitors • Terminations: standard SnPb, 100 % tin available • Large capacitance range • Encapsulated in a hard yellow epoxy resin Available Available • Variety of lead styles available • Supplied on tape (reel or ammopack) or in bulk • Low impedance and |
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Vishay |
Solid Tantalum Capacitors • Terminations: standard SnPb, 100 % tin available • Large capacitance range • Encapsulated in a hard yellow epoxy resin Available Available • Variety of lead styles available • Supplied on tape (reel or ammopack) or in bulk • Low impedance and |
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Vishay Siliconix |
P-Channel MOSFET ID (A) 20 16 rDS(on) (W) 0.007 @ VGS = 10 V 0.010 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested TO-252 D Drain Connected to Tab G D S G Top View Ordering Information: SUD50N03-07 SUD50N03-07—E3 ( |
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