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Vishay Siliconix |
P-Channel 30-V (D-S) MOSFET e device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specificati |
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Vishay |
Dual Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • AEC-Q101 qualified • Meets MSL level 1, per J-STD-020, LF maximu |
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Vishay |
Heavy Duty High-Voltage Capacitor Low DF and Low Heating, Low DC & AC Voltage Coefficient. • Tighter Tolerance On Capacitance. • Highest AC Voltage Ratings. PERFORMANCE CHARACTERISTICS: Operating Temperature Range: -30°C to +85°C Storage Temperature Range: -40°C to +100°C Dielectric |
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Vishay |
Heavy Duty High-Voltage Capacitor Low DF and Low Heating, Low DC & AC Voltage Coefficient. • Tighter Tolerance On Capacitance. • Highest AC Voltage Ratings. PERFORMANCE CHARACTERISTICS: Operating Temperature Range: -30°C to +85°C Storage Temperature Range: -40°C to +100°C Dielectric |
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Vishay |
Dual Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe |
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Vishay |
Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe |
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Vishay |
Trench MOS Barrier Schottky Rectifier • Very low profile - typical height of 1.7 mm Available • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available • Material categoriza |
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Vishay |
Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • AEC-Q101 qualified available: - Automotive orde |
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Vishay |
Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology generation 2 Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maxi |
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Vishay |
Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe |
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Vishay |
Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe |
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Vishay |
Heavy Duty High-Voltage Capacitor Low DF and Low Heating, Low DC & AC Voltage Coefficient. • Tighter Tolerance On Capacitance. • Highest AC Voltage Ratings. PERFORMANCE CHARACTERISTICS: Operating Temperature Range: -30°C to +85°C Storage Temperature Range: -40°C to +100°C Dielectric |
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Vishay |
Heavy Duty High-Voltage Capacitor Low DF and Low Heating, Low DC & AC Voltage Coefficient. • Tighter Tolerance On Capacitance. • Highest AC Voltage Ratings. PERFORMANCE CHARACTERISTICS: Operating Temperature Range: -30°C to +85°C Storage Temperature Range: -40°C to +100°C Dielectric |
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Vishay |
Heavy Duty High Voltage Capacitors Low DF and Low Heating, Low DC & AC Voltage Coefficient. • Tighter Tolerance On Capacitance. • Highest AC Voltage Ratings. #8-32NC-2B Tapped Holes Fig 17 D DIAMETER SIZE MAX. CODE in. mm A B C D E F G H .880 1.05 1.30 1.55 1.80 2.13 2.30 2.42 22.4 |
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Vishay |
N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • Synchronous Buck - Low Side - Notebook - Server - Workstation • Synchronous Rectifier - POL D S S S G 1 2 3 4 Top View S Ordering Informa |
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Vishay |
Dual Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • AEC-Q101 qualified • Meets MSL level 1, per J-STD-020, LF maximu |
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Vishay |
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe |
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Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology generation 2 Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maxi |
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Vishay |
Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe |
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Vishay |
Trench MOS Barrier Schottky Rectifier • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum pe |
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