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Vishay |
Fast Soft Recovery Rectifier Diode DESCRIPTION The 30EPF.. and 30CPF.. soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. Base common cathode 2 The glass passivation ensures stable reliable operation in the most s |
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Vishay |
Fast Soft Recovery Rectifier Diode DESCRIPTION The 30EPF.. and 30CPF.. soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. Base common cathode 2 The glass passivation ensures stable reliable operation in the most s |
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Vishay |
Schottky Rectifier • 175 °C TJ operation • Center tap TO-220 package • Very low forward voltage drop Base common cathode 2 Base common cathode 2 • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moist |
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Vishay |
Dual Common Cathode Ultrafast Rectifier • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low thermal resistance • High forward surge capability • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYP |
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Vishay |
Fast Soft Recovery Rectifier Diode DESCRIPTION The 30EPF.. and 30CPF.. soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. Base common cathode 2 The glass passivation ensures stable reliable operation in the most s |
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Vishay Siliconix |
Dual N-Channel MOSFET • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus Schottky • PWM Optimized • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (V) Diode Forward Voltage 0.51 V |
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Vishay |
Schottky Rectifier • 175 °C TJ operation • Center tap configuration • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness a |
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Vishay |
Schottky Rectifier • 175 °C TJ operation • Center tap configuration • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness a |
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Vishay |
High Performance Schottky Rectifier • 175 °C TJ operation • Center tap configuration • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness a |
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Vishay |
High Performance Schottky Generation • 175 °C high performance Schottky diode • Very low forward voltage drop • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency RoHS COMPLIANT • Increased ruggedness for reverse avalanche capability • RBSOA availabl |
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Vishay |
Schottky Rectifier • 150 °C TJ operation • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliabili |
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Vishay |
Transient Voltage Suppressors • Junction passivation optimized PAR® design • TJ = 185 °C capability suitable for high reliability and automotive requirement • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Bi-direction only • Excellent clamping capa |
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Vishay Siliconix |
Zener Diodes • Silicon Planar Power Zener Diodes. • Low profile surface-mount package. • Low leakage current • High temperature soldering: 260 °C/10 sec. at terminals 17249 Mechanical Data Case: JEDEC DO-219AB (SMF®) Plastic Case Packaging codes/options: GS18 - |
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Vishay |
Phase Control Thyristors • Center amplifying gate • Metal case with ceramic insulator • International standard case A-PUK (TO-200AB) • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYP |
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Vishay |
Phase Control Thyristors • Center amplifying gate • Metal case with ceramic insulator • International standard case A-PUK (TO-200AB) • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYP |
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Vishay |
Phase Control Thyristors • Center amplifying gate • Metal case with ceramic insulator • International standard case A-PUK (TO-200AB) • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYP |
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Vishay |
Phase Control Thyristors • Center amplifying gate • Metal case with ceramic insulator • International standard case A-PUK (TO-200AB) • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYP |
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Vishay |
Phase Control Thyristors • Center amplifying gate • Metal case with ceramic insulator • International standard case A-PUK (TO-200AB) • Designed and qualified for industrial level • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYP |
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Vishay Siliconix |
Dual Schottky Barrier Rectifier • Power pack • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB pa |
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Vishay |
Dual Common Cathode Ultrafast Rectifier • Power pack • Glass passivated pellet chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low thermal resistance • High forward surge capability • Solder dip 260 °C, 40 s • Material categorization: for definitions of co |
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