No. | Partie # | Fabricant | Description | Fiche Technique |
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Vishay Siliconix |
N-Channel JFETs D D D D Ultra-Low Leakage: 0.2 pA Very Low Current/Voltage Operation Ultrahigh Input Impedance Low Noise BENEFITS D Insignificant Signal Loss/Error Voltage with High-Impedance Source D Low Power Consumption (Battery) D Maximum Signal Output, Low Noi |
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Vishay Siliconix |
N-Channel JFETs D D D D Ultra-Low Leakage: 0.2 pA Very Low Current/Voltage Operation Ultrahigh Input Impedance Low Noise BENEFITS D Insignificant Signal Loss/Error Voltage with High-Impedance Source D Low Power Consumption (Battery) D Maximum Signal Output, Low Noi |
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Vishay |
N-Channel JFETs D Low Cutoff Voltage: 2N4338 <1 V D High Input Impedance D Very Low Noise D High Gain: AV = 80 @ 20 mA BENEFITS D Full Performance from Low-Voltage Power Supply: Down to 1 V D Low Signal Loss/System Error D High System Sensitivity D High-Quality Low |
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Vishay Siliconix |
N-Channel JFETs D D D D Ultra-Low Leakage: 0.2 pA Very Low Current/Voltage Operation Ultrahigh Input Impedance Low Noise BENEFITS D Insignificant Signal Loss/Error Voltage with High-Impedance Source D Low Power Consumption (Battery) D Maximum Signal Output, Low Noi |
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Vishay |
N-Channel JFETs D Low On-Resistance: 4391<30 W D Fast Switching—tON: 4 ns D High Off-Isolation: ID(off) with Low Leakage D Low Capacitance: < 3.5 pF D Low Insertion Loss BENEFITS D Low Error Voltage D High-Speed Analog Circuit Performance D Negligible “Off-Error,” |
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Vishay |
Small Signal Transistor • PNP Silicon Epitaxial Transistor for switching and amplifier applications. • Especially suitable for AF-driver and low-power output stages. • As complementary type, the NPN transistor 2N4124 is recommended. Mechanical Data Case: TO-92 Plastic Packa |
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Vishay |
N-Channel JFETs D Low On-Resistance: 2N4856 <25 W D Fast Switching—tON: 4 ns D High Off-Isolation—ID(off): 5 pA D Low Capacitance: 3 pF D Low Insertion Loss D N-Channel Majority Carrier FET BENEFITS D Low Error Voltage D High-Speed Analog Circuit Performance D Negl |
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Vishay |
N-Channel JFETs D Low On-Resistance: 2N4856 <25 W D Fast Switching—tON: 4 ns D High Off-Isolation—ID(off): 5 pA D Low Capacitance: 3 pF D Low Insertion Loss D N-Channel Majority Carrier FET BENEFITS D Low Error Voltage D High-Speed Analog Circuit Performance D Negl |
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Vishay |
N-Channel JFETs D Low On-Resistance: 4391<30 W D Fast Switching—tON: 4 ns D High Off-Isolation: ID(off) with Low Leakage D Low Capacitance: < 3.5 pF D Low Insertion Loss BENEFITS D Low Error Voltage D High-Speed Analog Circuit Performance D Negligible “Off-Error,” |
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Vishay |
N-Channel JFETs D Low Cutoff Voltage: 2N4338 <1 V D High Input Impedance D Very Low Noise D High Gain: AV = 80 @ 20 mA BENEFITS D Full Performance from Low-Voltage Power Supply: Down to 1 V D Low Signal Loss/System Error D High System Sensitivity D High-Quality Low |
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Vishay |
N-Channel JFETs D Excellent High-Frequency Gain: 2N4416/A, Gps 13 dB (typ) @ 400 MHz D Very Low Noise: 3 dB (typ) @ 400 MHz D Very Low Distortion D High AC/DC Switch Off-Isolation BENEFITS D Wideband High Gain D Very High System Sensitivity D High Quality of Amplif |
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Vishay |
N-Channel JFETs D Excellent High-Frequency Gain: 2N4416/A, Gps 13 dB (typ) @ 400 MHz D Very Low Noise: 3 dB (typ) @ 400 MHz D Very Low Distortion D High AC/DC Switch Off-Isolation BENEFITS D Wideband High Gain D Very High System Sensitivity D High Quality of Amplif |
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Vishay |
N-Channel JFETs D Low On-Resistance: 2N4856 <25 W D Fast Switching—tON: 4 ns D High Off-Isolation—ID(off): 5 pA D Low Capacitance: 3 pF D Low Insertion Loss D N-Channel Majority Carrier FET BENEFITS D Low Error Voltage D High-Speed Analog Circuit Performance D Negl |
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Vishay |
N-Channel JFETs D Low On-Resistance: 2N4856 <25 W D Fast Switching—tON: 4 ns D High Off-Isolation—ID(off): 5 pA D Low Capacitance: 3 pF D Low Insertion Loss D N-Channel Majority Carrier FET BENEFITS D Low Error Voltage D High-Speed Analog Circuit Performance D Negl |
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Vishay |
Small Signal Transistor • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor 2N4401 is recommended. • On special request, this transistor is also manufactured in the pin configuration TO-18. • This t |
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Vishay |
N-Channel JFETs D Low Cutoff Voltage: 2N4338 <1 V D High Input Impedance D Very Low Noise D High Gain: AV = 80 @ 20 mA BENEFITS D Full Performance from Low-Voltage Power Supply: Down to 1 V D Low Signal Loss/System Error D High System Sensitivity D High-Quality Low |
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Vishay |
N-Channel JFETs D Low On-Resistance: 2N4856 <25 W D Fast Switching—tON: 4 ns D High Off-Isolation—ID(off): 5 pA D Low Capacitance: 3 pF D Low Insertion Loss D N-Channel Majority Carrier FET BENEFITS D Low Error Voltage D High-Speed Analog Circuit Performance D Negl |
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Vishay |
N-Channel JFETs D Low On-Resistance: 2N4856 <25 W D Fast Switching—tON: 4 ns D High Off-Isolation—ID(off): 5 pA D Low Capacitance: 3 pF D Low Insertion Loss D N-Channel Majority Carrier FET BENEFITS D Low Error Voltage D High-Speed Analog Circuit Performance D Negl |
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Vishay |
N-Channel JFETs D Low On-Resistance: 4391<30 W D Fast Switching—tON: 4 ns D High Off-Isolation: ID(off) with Low Leakage D Low Capacitance: < 3.5 pF D Low Insertion Loss BENEFITS D Low Error Voltage D High-Speed Analog Circuit Performance D Negligible “Off-Error,” |
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Vishay |
N-Channel JFETs D Low Cutoff Voltage: 2N4338 <1 V D High Input Impedance D Very Low Noise D High Gain: AV = 80 @ 20 mA BENEFITS D Full Performance from Low-Voltage Power Supply: Down to 1 V D Low Signal Loss/System Error D High System Sensitivity D High-Quality Low |
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