| No. | Partie # | Fabricant | Description | Fiche Technique |
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Vishay |
Power MOSFET • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) Available • Material categorization: for definitions of compliance please se |
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Vishay |
MOSFET • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc |
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Vishay |
12 x 2 Character LCD • Type: Character • Display format: 12 x 2 characters • Built-in controller: ST 7066 (or equivalent) • Duty cycle: 1/16 • 5 x 8 dots includes cursor • + 5 V power supply • LED can be driven by pin 1, pin 2, or A and K • Material categorization: For d |
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Vishay |
Power MOSFET • Low Figure-of-Merit Ron x Qg • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC S D G D2PAK (TO-263) GDS G GD S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB Lead (Pb)-fre |
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Vishay |
Power MOSFET • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.c |
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Vishay Siliconix |
Power MOSFET 560 V VGS = 10 V 48 12 15 Single D • Low Figure-of-Merit Ron x Qg 0.555 • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC G D S GD S D2PAK (TO-263) G S G D S N-Channel MOSFET ORDERI |
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Vishay Siliconix |
Power MOSFET 560 V VGS = 10 V 48 12 15 Single D • Low Figure-of-Merit Ron x Qg 0.555 • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC G D S GD S D2PAK (TO-263) G S G D S N-Channel MOSFET ORDERI |
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Vishay Siliconix |
Power MOSFET 560 V VGS = 10 V 48 12 15 Single D • Low Figure-of-Merit Ron x Qg 0.555 • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC G D S GD S D2PAK (TO-263) G S G D S N-Channel MOSFET ORDERI |
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Vishay |
Power MOSFET • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) Available • Material categorization: for definitions of compliance please s |
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Vishay |
Power MOSFET • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.c |
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Vishay |
Power MOSFET • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) Available • Material categorization: for definitions of compliance please se |
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Vishay |
Power MOSFET • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Low gate charge (Qg) • Avalanche energy rated (UIS) Available • Material categorization: for definitions of compliance please see www.v |
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