| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Semicon Device |
2SC5297 · High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC5297] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor · High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability (Adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC5296] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4. |
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Advanced Micro Devices |
(IN80C321 / IN80C521 / IN80C541) CMOS SINGLE CHIP MICROCONTROLLER |
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Sanyo Semicon Device |
2SC5298 • High Speed : tf=100ns typ. • High Breakdown voltage : VCBO=1500V. • High reliability (Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode. Package Dimensions unit: mm 2039C-TO3PML [2SC5298] Specifications Absolute Maximum |
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Sanyo Semicon Device |
2SC5291 • Adoption of FBET, MBIT processes. • Large current capacity. • Can be provided in taping. • 9.5mm onboard mounting height. Package Dimensions unit : mm 2084B [2SC5291] 10.5 4.5 1.9 1.2 2.6 1.4 1.0 8.5 1.2 1.6 0.5 123 Specifications Absolute |
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Lattice Semiconductor |
In-System Programmable eXpanded Programmable Logic Device ■ Flexible Multi-Function Block (MFB) Architecture • • • • • SuperWIDE™ logic (up to 136 inputs) Arithmetic capability Single- or Dual-port SRAM FIFO Ternary CAM ■ Expanded In-System Programmability (ispXP™) • Instant-on capability • Single chip con |
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LOGIC Devices Incorporated |
4 x 8-bit Multilevel Pipeline Register u Four 8-bit Registers u Implements Double 2-Stage Pipeline or Single 4-Stage Pipeline Register u Hold, Shift, and Load Instructions u Separate Data In and Data Out Pins u High-Speed, Low Power CMOS Technology u Three-State Outputs u Replaces IDT29FC |
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LOGIC Devices Incorporated |
Dual Pipeline Register u u u u u u u u Dual 8-Deep Pipeline Register Configurable to Single 16-Deep Low Power CMOS Technology Replaces AMD Am29525 Load, Shift, and Hold Instructions Separate Data In and Data Out Pins Three-State Outputs Package Styles Available: • 28-pin P |
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LOGIC Devices Incorporated |
Dual Pipeline Register u u u u u u u u Dual 8-Deep Pipeline Register Configurable to Single 16-Deep Low Power CMOS Technology Replaces AMD Am29525 Load, Shift, and Hold Instructions Separate Data In and Data Out Pins Three-State Outputs Package Styles Available: • 28-pin P |
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Analog Devices |
MMIC I/Q Mixer RF range: 6 GHz to 10 GHz LO input frequency range: 6 GHz to 10 GHz Conversion loss: 8 dB typical at 6 GHz to 10 GHz Image rejection: 23 dBc typical at 6 GHz to 10 GHz LO to RF isolation: 43 dB typical LO to IF isolation: 25 dB typical Input IP3: 19 |
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VI |
VCXO 5x7 ceramic oscillator Previous Vectron Model Numbers Frequency range Frequency stabilities1 [Standard] Parameter overall tolerance (vs. Initial, vs. operating temperature range vs. Load vs. Supply, vs:1 year aging) Min -100.0 -50.0 -25.0 -100.0 -50 |
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Analog Devices |
MMIC VCO Dual Output: Fo = 12.4 - 13.4 GHz Fo/2 = 6.2 - 6.7 GHz Pout: +8 dBm Phase Noise: -110 dBc/Hz @100 kHz Typ. No External Resonator Needed 32 Lead 5x5mm SMT Package: 25mm² Functional Diagram 8 General Description The HMC529LP5 & HMC529LP5E are GaAs In |
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LOGIC Devices Incorporated |
4 x 8-bit Multilevel Pipeline Register u Four 8-bit Registers u Implements Double 2-Stage Pipeline or Single 4-Stage Pipeline Register u Hold, Shift, and Load Instructions u Separate Data In and Data Out Pins u High-Speed, Low Power CMOS Technology u Three-State Outputs u Replaces IDT29FC |
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LOGIC Devices Incorporated |
Dual Pipeline Register u u u u u u u u Dual 8-Deep Pipeline Register Configurable to Single 16-Deep Low Power CMOS Technology Replaces AMD Am29525 Load, Shift, and Hold Instructions Separate Data In and Data Out Pins Three-State Outputs Package Styles Available: • 28-pin P |
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Analog Devices |
GaAs MMIC I/Q MIXER Wide IF Bandwidth: DC - 3.5 GHz Image Rejection: 38 dB LO to RF Isolation: 50 dB High Input IP3: +23 dBm 24 Lead 4x4mm SMT Package: 16mm² General Description The HMC521ALC4 is a compact I/Q MMIC mixer in a leadless “Pb free” RoHS compliant SMT packag |
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Sanyo Semicon Device |
NPN TRANSISTOR · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=13.5dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. Package Dimensions unit:mm 2110A 1.9 [2SC5228] 0.95 0.95 0.4 43 0.16 0 to 0.1 1.5 0.5 2.5 Specifications 12 0.95 0.85 2.9 0.6 |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor · Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=10dB typ (f=1.5GHz). · High cutoff frequency : fT=11GHz typ. · Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=7GHz type. : S21e2=5.5dB typ (f=1.5GHz). |
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Sanyo Semicon Device |
NPN TRANSISTOR · High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability (Adoption of HVP process). · Adoption of MBIT process. · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC5296] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4. |
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Sanyo Semicon Device |
NPN TRANSISTOR · High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability (Adoption of HVP process). · Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC5297] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 |
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Origin Electric |
Surface Mounting Devices |
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