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ProMOS Technologies |
(V54C3xxxx4VE) 64Mbit SDRAM ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 4 banks x 1Mbit x 16 organization 4 banks x 2Mbit x 8 organization 4 banks x 4Mbit x 4 organization High speed data transfer rates up to 166 MHz Full Synchronous Dynamic RAM, with all signals referenced to clock rising edge Sing |
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ProMOS Technologies |
(V54C3xxxx4VE) 64Mbit SDRAM ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 4 banks x 1Mbit x 16 organization 4 banks x 2Mbit x 8 organization 4 banks x 4Mbit x 4 organization High speed data transfer rates up to 166 MHz Full Synchronous Dynamic RAM, with all signals referenced to clock rising edge Sing |
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Samsung Electronics |
Thick Film Chip Resistors Available in use of function trimming. Compatible with both wave and reflow soldering. Highly stable in auto-placement surface mounting application. Excellent eletrical characteristic. DIMENSIONS X, Y : Trimming area (Unit : mm) TYPE RT1608 RT201 |
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Senisys |
(CLTxxxx) Silicon Planar Epitxial PhotoTransistors |
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Silicon Storage Technology |
(SST34HF16xxx) 16M-bit Concurrent SuperFlash + SRAM Combo Memory • Flash Organization: 1M x16 or 2M x8 • Dual-Bank Architecture for Concurrent Read/Write Operation – 16 Mbit: 12 Mbit + 4 Mbit • (P)SRAM Organization: – 2 Mbit: 128K x16 or 256K x8 – 4 Mbit: 256K x16 or 512K x8 – 8 Mbit: 512K x16 or 1024K x8 • Singl |
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IBM Microelectronics |
(IBM031xxxxC) 16Mb SDRAM DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com m et4U.co ee DataSh DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com m et4U.co ee DataSh DataSheet4U.com DataSheet4U.com DataSheet 4 U .com |
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IBM Microelectronics |
(IBM031xxxxC) 16Mb SDRAM DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com m et4U.co ee DataSh DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com m et4U.co ee DataSh DataSheet4U.com DataSheet4U.com DataSheet 4 U .com |
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SST |
(SST32HFxxx) Multi-Purpose Flash (MPF) + SRAM ComboMemory • MPF + SRAM ComboMemory – SST32HF802: 512K x16 Flash + 128K x16 SRAM – SST32HF162: 1M x16 Flash + 128K x16 SRAM – SST32HF164: 1M x16 Flash + 256K x16 SRAM • Single 2.7-3.3V Read and Write Operations • Concurrent Operation – Read from or write to SR |
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SST |
(SST32HFxxx1C) Multi-Purpose Flash Plus + SRAM ComboMemory • ComboMemories organized as: – SST32HF1621C: 1M x16 Flash + 128K x16 SRAM – SST32HF1641x: 1M x16 Flash + 256K x16 SRAM – SST32HF1681: 1M x16 Flash + 256K x16 SRAM – SST32HF3241x: 2M x16 Flash + 256K x16 SRAM – SST32HF3281: 2M x16 Flash + 512K x16 S |
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SST |
(SST32HFxxx2C) Multi-Purpose Flash Plus + SRAM ComboMemory • ComboMemories organized as: – SST32HF1622C: 1M x16 Flash + 128K x16 SRAM – SST32HF1642x: 1M x16 Flash + 256K x16 SRAM – SST32HF1682: 1M x16 Flash + 512K x16 SRAM – SST32HF3242x: 2M x16 Flash + 256K x16 SRAM – SST32HF3282: 2M x16 Flash + 512K x16 S |
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SST |
(SST32HFxxx1) Multi-Purpose Flash Plus + SRAM ComboMemory • ComboMemories organized as: – SST32HF1621C: 1M x16 Flash + 128K x16 SRAM – SST32HF1641x: 1M x16 Flash + 256K x16 SRAM – SST32HF1681: 1M x16 Flash + 256K x16 SRAM – SST32HF3241x: 2M x16 Flash + 256K x16 SRAM – SST32HF3281: 2M x16 Flash + 512K x16 S |
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Omron |
Miniature Basci Switch ide terminal, normally open) 5. Terminals A: Solder terminals C2: Quick-connect terminals (#187) C: Quick-connect terminals (#250) B: Screw terminals Barrier (Models with Thermoplastic Case Only) None: Without barrier R: Right-hand barrier L: Left- |
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Panasonic |
Metallized Polypropylene Film Capacitor • Small size • Excellent frequency characteristics • Low loss • 85 ˚C, 85 % RH, W.V.✕1.0 for 500 hours • RoHS directive compliant ■ Recommended Applications • Lighting • High frequency and high current circuits (TVs, Monitors, Power Supplies, etc.) |
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Panasonic |
Metallized Polypropylene Film Capacitor • Small size • Excellent frequency characteristics • Low loss • 85 ˚C, 85 % RH, W.V.✕1.0 for 500 hours • RoHS directive compliant ■ Recommended Applications • Lighting • High frequency and high current circuits (TVs, Monitors, Power Supplies, etc.) |
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VISHAY |
(VSSR Series) WIDERSTAND DUENN VERBUNDEN 10K RM0.635 |
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Silicon Storage Technology |
(SST34HF16xxx) 16M-bit Concurrent SuperFlash + SRAM Combo Memory • Flash Organization: 1M x16 or 2M x8 • Dual-Bank Architecture for Concurrent Read/Write Operation – 16 Mbit: 12 Mbit + 4 Mbit • (P)SRAM Organization: – 2 Mbit: 128K x16 or 256K x8 – 4 Mbit: 256K x16 or 512K x8 – 8 Mbit: 512K x16 or 1024K x8 • Singl |
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Silicon Storage Technology |
(SST34HF16xxx) 16M-bit Concurrent SuperFlash + SRAM Combo Memory • Flash Organization: 1M x16 or 2M x8 • Dual-Bank Architecture for Concurrent Read/Write Operation – 16 Mbit: 12 Mbit + 4 Mbit • (P)SRAM Organization: – 2 Mbit: 128K x16 or 256K x8 – 4 Mbit: 256K x16 or 512K x8 – 8 Mbit: 512K x16 or 1024K x8 • Singl |
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SST |
(SST32HFxxx2) Multi-Purpose Flash Plus + SRAM ComboMemory • ComboMemories organized as: – SST32HF1622C: 1M x16 Flash + 128K x16 SRAM – SST32HF1642x: 1M x16 Flash + 256K x16 SRAM – SST32HF1682: 1M x16 Flash + 512K x16 SRAM – SST32HF3242x: 2M x16 Flash + 256K x16 SRAM – SST32HF3282: 2M x16 Flash + 512K x16 S |
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