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UniverChipSemi UM4 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
UM4423

UniverChipSemi
P-Channel Enhancement Mode MOSFET
 -30V/-15A, RDS(ON)=5.1mΩ (typ.)@VGS=-20V  -30V/-10A, RDS(ON)=5.9mΩ (typ.)@VGS=-10V  Super high design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Full RoHS compliance  SOP8 package design
 APPLICATI
Datasheet
2
UM4407A

UniverChipSemi
P-Channel Enhancement Mode MOSFET
 -30V/-12A, RDS(ON)=12mΩ (typ.)@VGS=-10V  -30V/-7.5A, RDS(ON)=19mΩ (typ.)@VGS=-4.5V  Super high design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Full RoHS compliance  SOP8 package design
 APPLICATI
Datasheet
3
UM4406A

UniverChipSemi
N-Channel Enhancement Mode MOSFET
 30V/11.6A, RDS(ON)=11mΩ (typ.)@VGS=10V  30V/10A, RDS(ON)=15mΩ (typ.)@VGS=4.5V  Super high design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Full RoHS compliance  SOP8 package design
 APPLICATIONS 
Datasheet
4
UM4409

UniverChipSemi
P-Channel Enhancement Mode MOSFET
 -30V/-15A, RDS(ON)=8mΩ (typ.)@VGS=-10V  -30V/-10A, RDS(ON)=10mΩ (typ.)@VGS=-4.5V  Super high design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Full RoHS compliance  SOP8 package design
 APPLICATION
Datasheet
5
UM4419

UniverChipSemi
P-Channel Enhancement Mode MOSFET
 -30V/-9.7A, RDS(ON)=14.5mΩ (typ.)@VGS=-10V  -30V/-7.0A, RDS(ON)=18.5mΩ (typ.)@VGS=-4.5V  Super high design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Full RoHS compliance  SOP8 package design
 APPL
Datasheet
6
UM4616

UniverChipSemi
30V Complementary Enhancement Mode MOSFET
 30V/10A, RDS(ON)=14mΩ @VGS=10V N_CH  -30V/-9.7A, RDS(ON)=20mΩ @VGS=-10V P_CH  30V/10A, RDS(ON)=22mΩ @VGS=4.5V N_CH  -30V/-7.0A, RDS(ON)=35mΩ @VGS=-4.5V P_CH  Super high design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC
Datasheet
7
UM4606

UniverChipSemi
30V Complementary Enhancement Mode MOSFET
 30V/7.0A, RDS(ON)=21mΩ @VGS=10V N_CH  -30V/-6.0A, RDS(ON)=33mΩ @VGS=-10V P_CH  30V/5.0A, RDS(ON)=34mΩ @VGS=4.5V N_CH  -30V/-5.0A, RDS(ON)=38mΩ @VGS=-4.5V P_CH  Super high design for extremely low RDS(ON)  Exceptional on-resistance and Maximum
Datasheet
8
UM4842

UniverChipSemi
Dual N-Channel Enhancement Mode MOSFET
 30V/7.8A, RDS(ON)=16mΩ @VGS=10V  30V/5.8A, RDS(ON)=28mΩ @VGS=4.5V  30V/5.0A, RDS(ON)=32mΩ @VGS=2.5V  Super high design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Full RoHS compliance  SOP8 package
Datasheet
9
UM4805

UniverChipSemi
Dual P-Channel Enhancement Mode MOSFET
 -30V/-12A, RDS(ON)=12mΩ (typ.)@VGS=-10V  -30V/-7.5A, RDS(ON)=19mΩ (typ.)@VGS=-4.5V  Super high design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Full RoHS compliance  SOP8 package design
 APPLICATI
Datasheet
10
UM4803A

UniverChipSemi
Dual P-Channel Enhancement Mode MOSFET
 -30V/-6.5A, RDS(ON)=33mΩ (typ.)@VGS=-10V  -30V/-5.0A, RDS(ON)=53mΩ (typ.)@VGS=-4.5V  Super high design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Full RoHS compliance  SOP8 package design
 APPLICAT
Datasheet
11
UM4800

UniverChipSemi
Dual N-Channel Enhancement Mode MOSFET
 30V/5.8A, RDS(ON)=18mΩ (typ.)@VGS=10V  30V/5.0A, RDS(ON)=24mΩ (typ.)@VGS=4.5V  30V/3.5A, RDS(ON)=30mΩ (typ.)@VGS=2.5V  Super high design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Full RoHS complian
Datasheet
12
UM4459

UniverChipSemi
P-Channel Enhancement Mode MOSFET
 -30V/-6.5A, RDS(ON)=33mΩ (typ.)@VGS=-10V  -30V/-5.0A, RDS(ON)=53mΩ (typ.)@VGS=-4.5V  Super high design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Full RoHS compliance  SOP8 package design
 APPLICAT
Datasheet
13
UM4447A

UniverChipSemi
P-Channel Enhancement Mode MOSFET
 -30V/-15A, RDS(ON)=5.5mΩ (typ.)@VGS=-10V  -30V/-10A, RDS(ON)=6.5mΩ (typ.)@VGS=-4.5V  Super high design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Full RoHS compliance  SOP8 package design
 APPLICAT
Datasheet
14
UM4435

UniverChipSemi
P-Channel Enhancement Mode MOSFET
 -30V/-10A, RDS(ON)=15mΩ (typ.)@VGS=-10V  -30V/-6.0A, RDS(ON)=25mΩ (typ.)@VGS=-4.5V  Super high design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Full RoHS compliance  SOP8 package design
 APPLICATI
Datasheet



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