No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
|
|
Unisonic Technologies |
2SB649A Box, K: Bulk, R: Tape Reel (2) AB3: SOT-89, T6C: TO-126C, T60: TO-126, T 92: TO-92 (3) x: refer to Classification of hFE (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R204-006, |
|
|
|
Unisonic Technologies |
2SB649 ng (1) B: Tape Box, K: Bulk, R: Tape Reel (2) AB3: SOT-89, T6C: TO-126C, T60: TO-126, T 92: TO-92 (3) x: refer to Classification of hFE (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of |
|
|
|
Unisonic Technologies |
MEDIUM POWER LOW-VOLTAGE TRANSISTOR * High current output up to 3A * Low saturation voltage * Complement to 2SD882 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SB772L-x-T60-K 2SB772G-x-T60-K TO-126 2SB772L-x-T6C-K 2SB772G-x-T6C-K TO-126C 2SB772L-x- |
|
|
|
Unisonic Technologies |
NPN SILICON TRANSISTOR * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed * Complement the 2SD1816 ORDERING INFORMATION Ordering Number Lead Free Halogen Fr |
|
|
|
Unisonic Technologies |
MEDIUM POWER LOW-VOLTAGE TRANSISTOR * High current output up to 3A * Low saturation voltage * Complement to 2SD882S 1 TO-92 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB772SL-x-AA3-R 2SB772SG-x-AA3-R 2SB772SL-x-AB3-R 2SB772SG-x-AB3-R 2SB772SL-x-T92-B 2SB7 |
|
|
|
Unisonic Technologies |
MEDIUM POWER LOW VOLTAGE TRANSISTOR *High current output up to 3A *Low saturation voltage *Complement to 2SD882 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitte |
|
|
|
Unisonic Technologies |
MEDIUM POWER LOW VOLTAGE TRANSISTOR *High current output up to 3A *Low saturation voltage *Complement to 2SD882S TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-B |
|
|
|
Unisonic Technologies |
HIGH VOLTAGE TRANSISTOR P MAX 100 100 1 1 300 UNIT V µA µA V V 0.7 60 20 9 MHZ CLASSIFICATION of hFE1 RANK RANGE O 60-120 Y 100-200 GR 150-300 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R203-014,A |
|
|
|
Unisonic Technologies |
PNP EPITAXIAL SILICON TRANSISTOR * High DC current gain * Low collector to emitter saturation voltage * High switch speed ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SB936L-TN3-T 2SB936G-TN3-T TO-252 2SB936L-TN3-R 2SB936G-TN3-R TO-252 Note: Pin |
|