| No. | Partie # | Fabricant | Description | Fiche Technique |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) < 6.3Ω@VGS = 10V * Ultra Low gate charge (typical 17.2nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 1 1 Power |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N7002L-AE2-R 2 |
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Unisonic Technologies |
DUAL N-CHANNEL POWER MOSFET * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Package 2N7002DWG-AL6-R SOT-363 Note: |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * Low Reverse Transfer Capacitance * ESD Protected * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N7002Z |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) <1.0Ω @VGS = 10 V * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-220F2 1 TO-220F3 ORDERING INFORMATION Ordering Number Lead Free Hal |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) = 6.3Ω@VGS = 10V * Ultra Low gate charge (typical 8.1nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING I |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) ≤ 0.83Ω @ VGS=10V, ID=6.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-028 |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Package 2N7002TG-AN3-R SOT-523 Note: P |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) * ESD Protected * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 3.Drain Power MOSFET 2.Gate 1.Source ORDERING INFORMATIO |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) < 5.5Ω@VGS = 10V , ID = 1.0 A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N70KL-TF3-T 2N70 |
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Unisonic Technologies |
DUAL N-CHANNEL POWER MOSFET * Low Reverse Transfer Capacitance * ESD Protected * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness Power MOSFET 54 6 1 23 SOT-26 654 1 23 SOT-363 SYMBOL (6) D1 (3) D2 (2) G1 (5) G2 (1) S1 |
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