| No. | Partie # | Fabricant | Description | Fiche Technique |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) < 0.33Ω @ VGS=10V, ID=9.0A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen |
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UNISONIC TECHNOLOGIES |
N-CHANNEL MOSFET * RDS(ON) ≤ 0.5Ω @ VGS=10V, ID=9.0A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Fr |
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Unisonic Technologies |
N-Channel Power MOSFET * RDS(ON) ≤ 0.5 Ω @ VGS=10V, ID=9.0A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 2.Drain 1 TO-247 11 TO-3P TO-3PN 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lea |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) ≤ 0.35Ω @ VGS=10V, ID=9.0A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 2.Drain 1.Gate 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-220F2 1 TO-220F3 1 TO-251 1 TO-251S2 1 TO-263 |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) ≤ 408mΩ @VGS = 10 V * Ultra Low Gate Charge: 50nC (TYP.) * Low Reverse Transfer ( CRSS = typical 23pF ) * Fast Switching Speed * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL 2.Drain 1.Gate 3.Source |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) < 0.28Ω @ VGS=10V, ID=9.0A * By using Super Junction Structure * Fast Switching * With 100% Avalanche Tested SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 18NM50L-TF1-T 18NM50G-TF1-T 18NM50L-TM3 |
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Unisonic Technologies |
N-CHANNEL MOSFET * RDS(ON) ≤ 0.32 Ω @ VGS=10V, ID=9.0A * High switching speed * 100% avalanche tested SYMBOL 2.Drain 1 TO-220 1 TO-220F 11 TO-220F1 TO-220F2 1 TO-220F3 1 TO-247 11 TO-3P TO-3PB 1 TO-263 1.Gate 3.Source www.unisonic.com.tw Copyright © |
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UNISONIC TECHNOLOGIES |
18A 250V N-CHANNEL POWER MOSFET * RDS(ON) < 0.24 Ω @ VGS=10V, ID=9.0A * High switching speed SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 18N25L-TA3-T 18N25G-TA3-T 18N25L-TF1-T 18N25G-TF1-T 18N25L-TF2-T 1 |
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