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Unisonic Technologies |
NPN Epitaxial Silicon Transistor * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package - MJE13001G-x-AB3-A-R SOT-89 - MJE13001G-x-AB3-F-R SOT-89 MJE13001L-x-T92-B MJE13001G-x-T92-B TO- |
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Unisonic Technologies |
NPN SILICON TRANSISTOR * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package - MJE13001G-Q-x-AB3-A-R SOT-89 - MJE13001G-Q-x-AB3-F-R SOT-89 MJE13001L-Q-x-T92-F-B MJE13001G-Q-x-T |
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Unisonic Technologies |
NPN SILICON TRANSISTOR * High collector-base breakdown voltage * High reliability * Low reverse leakage current EQUIVALENT CIRCUIT C B E ORDERING INFORMATION Ordering Number Lead Free Halogen Free 13003DEL-x-T60-F-K 13003DEG-x-T60-F-K 13003DEL-x-T92-A-B 13003 |
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Unisonic Technologies |
NPN SILICON TRANSISTOR * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C. * 900V blocking capability APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/rela |
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Unisonic Technologies |
NPN SILICON TRANSISTOR * High collector-base breakdown voltage * Low reverse leakage current * High reliability EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Lead Free Halogen Free 13002AHL-TM3-T 13002AHG-TM3-T 13002AHL-T60-F-K 13002AHG-T60-F-K 13002 |
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Unisonic Technologies |
NPN SILICON TRANSISTOR *Collector-Emitter Sustaining Voltage: VCEO (sus)=300V. *Collector-Emitter Saturation Voltage: VCE(sat)=1.0V(Max.) @IC=1.0A, IB =0.25A *Switch Time- tf =0.7μs(Max.) @Ic=1.0A. ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE1300 |
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Unisonic Technologies |
NPN SILICON TRANSISTOR * High Voltage Capability * Low Spread of Dynamic Parameters * Very High Switching Speed 1 TO-92 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 13002AGL-T92-A-B 13002AGP-T92-A-B 13002AGL-T92-A-K 13002AGP-T92-A-K Package TO-9 |
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Unisonic Technologies |
NPN SILICON TRANSISTOR * High collector-base breakdown voltage * Low reverse leakage current * High reliability EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Lead Free Halogen Free 13003BSL-TM3-T 13003BSG-TM3-T 13003BSL-T60-F-K 13003BSG-T60-F-K 13003 |
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Unisonic Technologies |
NPN SILICON TRANSISTOR * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C. * 900V blocking capability APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/rela |
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Unisonic Technologies |
NPN SILICON TRANSISTOR * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C. * 700V blocking capability APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/rela |
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Unisonic Technologies |
NPN SILICON TRANSISTOR * High collector-base breakdown voltage * Low reverse leakage current * High reliability EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Lead Free Halogen Free 13003ADAL-TM3-T 13003ADAG-TM3-T 13003ADAL-T60-F-K 13003ADAG-T60-F-K 1 |
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Unisonic Technologies |
NPN SILICON TRANSISTOR * High collector-base breakdown voltage * High reliability EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Lead Free Halogen Free 13003DWL-x-TM3-T 13003DWG-x-TM3-T 13003DWL-x-T60-F-K 13003DWG-x-T60-F-K 13003DWL-x-T92-A-B 13003DW |
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Unisonic Technologies |
NPN SILICON TRANSISTOR * VCES = 850 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching matrix 2 to 4 Amp, 25 and 100°С tC @ 3A, 100°С is 180 ns (Typ) * 850V blocking capability * SOA and switching applications information APPLICATIONS * Switc |
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Unisonic Technologies |
1.0A SCHOTTKY BARRIER RECTIFIER * Low forward voltage drop * High current capability * High surge capability * Low power loss * High efficiency ORDERING INFORMATION Ordering Number Lead Free Halogen Free SB130L-CA2-R SB130G-CA2-R SB130L-CA2F-R SB130G-CA2F-R SB130L-CB2-R |
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Unisonic Technologies |
NPN SILICON TRANSISTOR * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C. * 700V blocking capability APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/rela |
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Unisonic Technologies |
NPN SILICON TRANSISTOR * High collector-base breakdown voltage * Low reverse leakage current * High reliability EQUIVALENT CIRCUIT C B E ORDERING INFORMATION Ordering Number Lead Free Halogen Free 13003BDGL-TM3-T 13003BDGP-TM3-T 13003BDGL-T60-F-K 13003BDGP-T60 |
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Unisonic Technologies |
NPN SILICON TRANSISTOR * High collector-base breakdown voltage * Low reverse leakage current * High reliability EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Lead Free Halogen Free 13003DFL-xx-T60-F-K 13003DFG-xx-T60-F-K 13003DFL-xx-T92-A-B 13003DFG-x |
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Unisonic Technologies |
NPN SILICON TRANSISTOR * High collector-base breakdown voltage * Low reverse leakage current * High reliability EQUIVALENT CIRCUIT ORDERING INFORMATION Ordering Number Lead Free Halogen Free 13003DHL-x-TM3-T 13003DHG-x-TM3-T 13003DHL-x-T60-F-K 13003DHG-x-T60-F- |
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Unisonic Technologies |
NPN SILICON TRANSISTOR * High collector-base breakdown voltage * Low reverse leakage current * High reliability EQUIVALENT CIRCUIT C B E ORDERING INFORMATION Ordering Number Lead Free Halogen Free 13003EDAL-TM3-T 13003EDAG-TM3-T 13003EDAL-T60-F-K 13003EDAG-T6 |
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Unisonic Technologies |
NPN SILICON TRANSISTOR 1 * VCEO(SUS)= 800 V * Reverse bias SOA with inductive loads @ TC = 100°С * Inductive switching matrix 2 to 4 Amp, 25 and 100°С tC @ 3A, 100°С is 180 ns (Typ) * 800V blocking capability * SOA and switching applications information APPLICATIONS |
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