| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(on) ≤ 1.1Ω @ VGS=10V, ID=6.0A * High switching speed * 100% avalanche tested SYMBOL 2.Drain 1 TO-3P 1 TO-220F1 TO-220F TO-220F2 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 12N90L-TF1-T 12 |
|
|
|
|
Unisonic Technologies |
N-CHANNEL POWER MOSFET * 12A, 500V, RDS(ON)=0.54Ω @ VGS=10V * High Switching Speed * 100% Avalanche Tested SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Package TO-220 TO-220F1 1 G G Pin Assignment 2 3 D S D S Packing Tube Tube Ordering Number Lead Free H |
|
|
|
|
UNISONIC TECHNOLOGIES |
12A 300V N-CHANNEL POWER MOSFET * RDS(ON)=0.34Ω @ VGS=10V * High switching speed SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Package TO-252 1 G Pin Assignment 2 3 D S Packing Tape Reel Ordering Number Lead Free Halogen Free 12N30L-TN3-R 12N30G-TN3-R Note: Pin As |
|
|
|
|
UNISONIC TECHNOLOGIES |
12A 250V N-CHANNEL POWER MOSFET * ID=12A * VDS = 250V * RDS(ON)=0.34Ω @ VGS=10V * High switching speed * 100% avalanche tested SYMBOL ORDERING INFORMATION Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube Ordering Number Lead Free Halogen Free 12N25VL-TA3-T 12N25VG-T |
|
|
|
|
Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) <1.0Ω @VGS = 10 V * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 1 TO-220 1 TO-220F 1 TO-220F1 1 TO-220F2 1 TO-220F3 ORDERING INFORMATION Ordering Number Lead Free Hal |
|
|
|
|
Unisonic Technologies |
Dual N-Channel MOSFET * Low Gate Charge (Typically 14.2nC) * RDS(ON) < 0.18Ω @ VGS=10V, ID=2.0A * Fast Switching Speed * Simple Drive Requirement SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 12NN10G-S08-R 12NN10G-S08- |
|
|
|
|
Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) ≤ 0.83Ω @ VGS=10V, ID=6.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-028 |
|
|
|
|
Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(on) < 0.18Ω @ VGS=10V, ID=6A * High switching speed * Low gate charge SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 12N10L-TA3-T 12N10G-TA3-T 12N10L-TM3-T 12N10G-TM3-T |
|
|
|
|
UNISONIC TECHNOLOGIES |
12A 60V N-CHANNEL POWER MOSFET * 12A, 60V, RDS(on) < 0.10Ω @VGS = 10V * High switching speed * Low gate charge * Halogen Free SYMBOL ORDERING INFORMATION Package TO-252 S: Source 1 G Pin Assignment 2 3 D S Packing Tape Reel Ordering Number Lead Free Halogen Free 12N06ZL-T |
|
|
|
|
Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) < 0.85Ω @ VGS = 10V, ID = 6.0A * Ultra low gate charge ( typical 42 nC ) * Low reverse transfer capacitance ( CRSS = typical 25 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYM |
|
|
|
|
Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) < 0.52 Ω @ VGS = 10 V, ID = 6.0 A * High Switching Speed * 100% Avalanche Tested SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 12N50KL-TA3-T 12N50KG-TA3-T 12N50KL-TF1-T 12N50KG-TF1-T 12N50KL-T |
|
|
|
|
Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) ≤ 0.70Ω @ VGS=10V, ID=6.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness 1 TO-220F3 SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 12N60KL-TA3-T 12N60KG |
|
|
|
|
Unisonic Technologies |
N-CHANNEL POWER MOSFET * RDS(ON) < 0.75 Ω @ VGS = 10 V, ID = 6 A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Ordering Number Lead Free Halogen Free 12N65KL-TF1-T 1 |
|