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PNP AMPLIFIER Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional |
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LOW LEVEL AND LOW NOISE NPN EPITAXIAL SILICON TRANSISTOR * High Total Power Dissipation. (450mW) * Excellent hFE Linearity. * Complementary to UTC MMBT9015 3 1 2 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Ordering Number MMBT9014G-x-AE3-R Note: Pin Assignment: E: Emitter B: Base Package SOT-23 C: |
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NPN GENERAL PURPOSE AMPLIFIER * This device is for use as a medium power amplifier and switch requiring collector currents up to 600mA. 2 1 SOT-23 (JEDEC TO-236) 3 12 SOT-323 1 2 1 SOT-523 DFN1006-3 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package M |
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1W OUTPUT AMPLIFIER OF POTABLE RADIOS *High total Power Dissipation. (625mW) *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012 1 2 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Ordering Number MMBT9013G-x-AE3-R Note: Pin Assignment: E: Emitter |
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1W OUTPUT AMPLIFIER OF POTABLE RADIOS *High total power dissipation. (625mW) *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC MMBT9013 1 2 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Ordering Number MMBT9012G-x-AE3-R Note: Pin Assignment: E: Emitter |
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HIGH VOLTAGE TRANSISTOR PNP SILICON TRANSISTOR *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: PC(MAX)=350mW *Low collector-Emitter saturation voltage 3 APPLICATIONS *Telephone switching *High voltage switch 1 2 SOT-23 *Pb-free plating product number: M |
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PNP SILICON TRANSISTOR * Collector-Emitter Voltage: VCEO=40V * Complementary to UTC MMBT3904 ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MMBT3906L-AE3-R MMBT3906G-AE3-R SOT-23 MMBT3906L-AL3-R MMBT3906G-AL3-R SOT-323 MMBT3906L-AN3-R MM |
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HIGH CURRENT SILICON BRIDGE RECTIFIERS * High Collector-Emitter Voltage: VCEO=160V * High current gain 3 1 2 SOT-23 *Pb-free plating product number:MMBT5551L www.DataSheet4U.com ORDERING INFORMATION Order Number Normal Lead Free Plating MMBT5551-x-AE3-6-R MMBT5551L-x-AE3-6-R Package |
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DARLINGTON TRANSISTOR * Collector-Emitter Voltage: VCES = 30V * Collector Dissipation: PC(MAX) = 350 mW 1 2 SOT-23 (JEDEC TO-236) 3 21 SOT-323 ORDERING INFORMATION Ordering Number MMBTA14G-AE3-R MMBTA14G-x-AL3-R Note: Pin Assignment: E: Emitter B: Base Package |
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(MMBTA44 / MMBTA45) HIGH VOLTAGE TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR *Collector-Emitter voltage: VCEO=400V (UTC MMBTA44) VCEO=350V (UTC MMBTA45) *Collector current up to 300mA *Complement to UTC MMBTA94/93 *Power Dissipation: PD(max)=350mW 3 NPN EPITAXIAL SILICON TRANSISTOR 1 2 MARKING (MMBTA44) SOT-23 3D * Pb-fr |
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NPN GENERAL PURPOSE AMPLIFIER tion Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional devi |
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(MMBT5088 / MMBT5089) NPN GENERAL PURPOSE AMPLIFIER Derating Factor above TA= 25°C PD 350 mW 2.8 mW/°C Junction Temperature TJ 125 °C Operating Temperature TOPR -40 ~ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device |
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HIGH VOLTAGE TRANSISTOR * Collector-Emitter voltage: VCEO=300V(MMBTA42) * Collector-Emitter voltage: VCEO=200V(MMBTA43) * High current gain * Collector Dissipation: Pc (max) =350mW 3 1 2 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Ordering Number MMBTA42G-AE3-R MMBTA4 |
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DARLINGTON TRANSISTOR * Collector-Emitter Voltage: VCES = -30V * Collector current up to -1.2A * Collector Dissipation: PC = 625 mW 3 2 1 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MMBTA63L-AE3-R MMBTA63G-AE3-R SOT |
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HIGH-SPEED SWITCHING DIODE * Ultra-high speed * Low forward voltage * Fast reverse recovery time DIODE ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package MMBD4148L-AE3-R MMBD4148G-AE3-R SOT-23 MMBD4148L-AL3-R MMBD4148G-AL3-R SOT-323 MMBD4148L-AN |
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PNP EPITAXIAL SILICON TRANSISTOR *High total power dissipation. (450mW) *Excellent hFE linearity. *Complementary to UTC MMBT9014 3 1 2 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Ordering Number MMBT9015G-x-AE3-R Note: Pin Assignment: E: Emitter B: Base Package SOT-23 C: Col |
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LOCAL OSCILLATOR OF FM/VHF TUNER NPN EPITAXIAL PLANAR TRANSISTOR * High Current Gain Bandwidth Product f T = 1.1GHz (Typ) 3 1 2 SOT-23 (JEDEC TO-236) 3 1 2 SOT-523 ORDERING INFORMATION Ordering Number MMBT9018G-x-AE3-R MMBT9018G-x-AN3-R Note: Pin Assignment: E: Emitter B: Base Package SOT-23 SOT-523 C: |
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DARLINGTON TRANSISTOR * Collector-Emitter Voltage: VCES = 30V * Collector Dissipation: PC(MAS) = 350 mW 3 1 2 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Ordering Number MMBTA13G-AE3-R Note: Pin Assignment: E: Emitter B: Base Package SOT-23 C: Collector Pin Assig |
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(MMBTA44 / MMBTA45) HIGH VOLTAGE TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR *Collector-Emitter voltage: VCEO=400V (UTC MMBTA44) VCEO=350V (UTC MMBTA45) *Collector current up to 300mA *Complement to UTC MMBTA94/93 *Power Dissipation: PD(max)=350mW 3 NPN EPITAXIAL SILICON TRANSISTOR 1 2 MARKING (MMBTA44) SOT-23 3D * Pb-fr |
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AMPLIFIER TRANSISTOR PNP SILICON TRANSISTOR 3 * Collector-Emitter Voltage: VCEO=-80V * Collector Dissipation: PD=350mW PNP SILICON TRANSISTOR 1 2 SOT-23 *Pb-free plating product number: MMBTA56L ORDERING INFORMATION Order Number Normal Lead Free Plating MMBTA56-AE3-R MMBTA56L-AE3-R Package |
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