| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
UTC |
650V N-CHANNEL MOSFET * RDS(ON) ≤ 0.15 Ω @ VGS=10V, ID=15A * Fast body diode MOSFET technology * Low switching losses due to reduced Qrr * Single Pulse Avalanche Energy Rated * Fast Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Avalanche ener |
|
|
|
|
UTC |
N-CHANNEL POWER MOSFET * RDS(ON)<110 mΩ @VGS=10V SYMBOL 1 TO-252 1 SOT-223 ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free UF3055L-AA3-R UF3055G-AA3-R UF3055L-TN3-R UF3055G-TN3-R Package SOT-223 TO-252 Pin Assignment 123 GDS GDS Packing |
|
|
|
|
UTC |
N-CHANNEL MOSFET * RDS(ON)<110 mΩ @VGS=10V SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free - UTF3055G-AA3-R UTF3055L-TN3-R UTF3055G-TN3-R Note: Pin Assignment: S: Source G: Gate D: Drain Package |
|
|
|
|
UTC |
N-CHANNEL MOSFET * RDS(ON) ≤ 0.13 Ω @ VGS=10V, ID=15A * Fast body diode MOSFET technology * High Switching Speed * 100% Avalanche Tested SYMBOL (2) Drain (5) Drain Power MOSFET (1) Gate (3) Source TO-220 / TO-220F1 TO-247 / TO-263 (1) Gate (2) Driver Source ( |
|