No. | Partie # | Fabricant | Description | Fiche Technique |
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UNIKC |
N-Channel MOSFET MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±25V 80 1 1.9 3 ±100 Zero Gate Voltage Drain Current IDSS VDS = 64V, V |
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UNIKC |
Dual N-Channel MOSFET |
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UNIKC |
N-Channel MOSFET |
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UNIKC |
N-Channel MOSFET |
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UNIKC |
N-Channel Transistor |
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UNIKC |
N-Channel MOSFET |
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UNIKC |
N-Channel MOSFET down Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA 100 V 1.3 1.8 2.3 VDS = 0V, VGS = ±20V ±100 nA VDS = 80V, VGS = 0V VDS = 80V, VGS = 0V , |
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UNIKC |
N-Channel MOSFET n-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V 100 V 1.3 1.8 2.3 ±100 nA Zero Gate Voltage Drain Current IDSS VDS = 80V , VGS = 0V VDS = |
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UNIKC |
N-Channel MOSFET |
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UNIKC |
N-Channel Transistor |
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UNIKC |
N-Channel MOSFET |
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