| No. | Partie # | Fabricant | Description | Fiche Technique |
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UNIKC |
N-Channel MOSFET OL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V 25 1.0 1.8 2.5 ±250 Zero Gate Voltage D |
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UNIKC |
N-Channel MOSFET rce Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = 250mA 25 V VDS = VGS, ID = 250mA 1 1.8 3 VDS = 0V, VGS = ±20V ±250 nA VDS |
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UNIKC |
MOSFET |
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UNIKC |
N-Channel MOSFET |
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UNIKC |
N-Channel Transistor |
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