| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Truesemi |
N-Channel MOSFET • 550V @TJ = 150 ℃ • Typ. RDS(on) = 0.21Ω • Ultra Low gate charge (typ. Qg = 43nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Co |
|
|
|
|
Truesemi |
N-Channel MOSFET • 850V @TJ = 150 ℃ • Typ. RDS(on) = 0.22Ω • Ultra Low gate charge (typ. Qg = 70nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuou |
|
|
|
|
Truesemi |
N-Channel MOSFET • 850V @TJ = 150 ℃ • Typ. RDS(on) = 0.22Ω • Ultra Low gate charge (typ. Qg = 70nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuou |
|
|
|
|
UE |
40 PIN SMD ETHERNET 10/100 BASE QUAD PORT TRANSFORMER |
|
|
|
|
UE |
40 PIN SMD ETHERNET 10/100 BASE QUAD PORT TRANSFORMER IEEE 802.3 Ethernet compatible . 100 Base-TX Surface mountable . Design for multiport repeater and Ethernet switching HUB application . z Customer designs available for specific application. z Operating temperature range : 0℃ to +70℃. z Storage temp |
|
|
|
|
Truesemi |
N-Channel MOSFET • 850V @TJ = 150 ℃ • Typ. RDS(on) = 0.21Ω • Ultra Low gate charge (typ. Qg = 27.5nC) • 100% avalanche tested TO-247 Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current -Continuous (TC |
|
|
|
|
MTRONPTI |
Multiple Frequency VCXO • • • • • • • Multiple Output Frequencies (2, 3, or 4) - Selectable QiK ChipTM Technology Superior jitter performance (less than 0.25 ps RMS, 12 kHz - 20 MHz) APR from ±50 to ±300 ppm over industrial temperature range SAW replacement - bette |
|
|
|
|
Truesemi |
N-Channel MOSFET • 550V @TJ = 150 ℃ • Typ. RDS(on) = 0.21Ω • Ultra Low gate charge (typ. Qg = 43nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Co |
|
|
|
|
Truesemi |
N-Channel MOSFET • 550V @TJ = 150 ℃ • Typ. RDS(on) = 0.12Ω • Ultra Low gate charge (typ. Qg = 70nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -C |
|
|
|
|
Truesemi |
N-Channel MOSFET • 550V @TJ = 150 ℃ • Typ. RDS(on) = 0.21Ω • Ultra Low gate charge (typ. Qg = 43nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -C |
|
|
|
|
Truesemi |
N-Channel MOSFET • 550V @TJ = 150 ℃ • Typ. RDS(on) = 0.21Ω • Ultra Low gate charge (typ. Qg = 43nC) • 100% avalanche tested TO-247 Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current -Continuous (TC = |
|
|
|
|
Truesemi |
N-Channel MOSFET • 550V @TJ = 150 ℃ • Typ. RDS(on) = 0.12Ω • Ultra Low gate charge (typ. Qg = 70nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -C |
|
|
|
|
Truesemi |
N-Channel MOSFET • 750V @TJ = 150 ℃ • Typ. RDS(on) = 0.3Ω • Ultra Low gate charge (typ. Qg = 43nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Co |
|
|
|
|
Truesemi |
N-Channel MOSFET • 750V @TJ = 150 ℃ • Typ. RDS(on) = 0.3Ω • Ultra Low gate charge (typ. Qg = 43nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Co |
|
|
|
|
Truesemi |
N-Channel MOSFET • 850V @TJ = 150 ℃ • Typ. RDS(on) = 0.22Ω • Ultra Low gate charge (typ. Qg = 70nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuou |
|
|
|
|
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor ，，。 High PC, low VCE(sat), high current switching. / Applications ，，，。 Medium power switching and muting, linear regulators, LCD back-lighting, supply line switching circuits. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PI |
|
|
|
|
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor ，， High PC, low VCE(sat), high current switching / Applications ，，， Medium power switching and muting, linear regulators, LCD back-lighting, supply line switching circuits / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3： |
|
|
|
|
Silicon Labs |
Bluetooth SiP Module • Bluetooth Low Energy 5.3 and Bluetooth Mesh connectivity • Built-in antenna or RF pin • Up to 10 dBm TX output power • -97 dBm BLE 1M RX sensitivity • 32-bit ARM® Cortex®-M33 core running up to 78 MHz • 1536/256 kB of Flash/RAM memory • Vault High |
|
|
|
|
Truesemi |
N-Channel MOSFET • 850V @TJ = 150 ℃ • Typ. RDS(on) = 0.21Ω • Ultra Low gate charge (typ. Qg = 27.5nC) • 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) - |
|