| No. | Partie # | Fabricant | Description | Fiche Technique |
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Tyco Electronics |
Radar Pulsed Power Transistor - 220 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Ma |
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Tyco Electronics |
Avionics Pulsed Power Transistor - 175 Watts/ 1030-1090 MHz/ 250ms Pulse/ • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Ma |
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Tyco Electronics |
AVIONICS PULSED POWER TRANSISTOR 75 WATTS/ 1030 - 1090 MHz/ 250us PULSE/ 10% DUTY • Designed for Pulsed Avionics Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance M |
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Tyco Electronics |
Radar Pulsed Power Transistor - 110 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matc |
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Tyco Electronics |
AVIONICS PULSED POWER TRANSISTOR • Designed for Pulsed Avionics Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • Diffused Emitter Ballasting Resistors • Gold Metalization System • Internal Input and Output Impedance M |
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Tyco Electronics |
Avionics Pulsed Power Transistor - 550 Watts/1030-1090 MHz/ 10us Pulse/ 1% Duty • • • • • • • • • Designed for Short Pulse IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization S |
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Tyco Electronics |
Radar Pulsed Power Transistor - 100 Watts/ 1.1-1.3 GHz/ 3ms Pulse/ 30% Duty • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Ma |
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Tyco Electronics |
Radar Pulsed Power Transistor/ 2W/ loops Pulse/ 10% Duty 1.2 - 1.4 GHz NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetii: Metal/Ceramic Package c_I |
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Tyco Electronics |
Radar Pulsed Power Transistor - 80 Watts/ 1.20-1.40 GHz/ 150ms Pulse/ 10% Duty • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Ma |
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Tyco Electronics |
Wireless Bipolar Power Transistor/ 1 OW 1.78 - 1.90 GHz l l l l l PH1819-10 v2.00 / ,744 :lE.SZ +--, 5s: .,4 22) Designed for Cellular Base Station Applications -30 dBc Typ 3rd IMD at 10 Watts PEP Common Emitter Configuration Internal Input Impedance Matching Diffused Emitter BaIlasting Absolute‘lblax |
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Tyco Electronics |
Avionics Pulsed Power Transistor - 350 Watts/1030-1090 MHz/ 250us Pulse/ 10% Duty • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Ma |
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Tyco Electronics |
Avionics Pulsed Power Transistor/ 700 Watts/1.03-1.09 GHz/ 32 mS Pulse/ 2% Duty Q Q Q Q Q Q Q Q Absolute Maximum Ratings @ 25 °C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Dissipated Power (Standard Pulse Cond.) Dissipated Power (Mode-S Pulse Train) Storage Temperature Junction Temperature |
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Tyco Electronics |
Radar Pulsed Power Transistor - 12 Watts/1.20-1.40 GHz/ 150 mS Pulse/ 10% Duty • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Ma |
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Tyco Electronics |
Radar Pulsed Power Transistor - 25 Watts/ 1.20-1.40 GHz/ 150mS Pulse/ 10% Duty • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Ma |
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Tyco Electronics |
Radar Pulsed Power Transistor/ 300 Watts/1.20-1.40 GHz/ 150 mS Pulse/ 10% Duty Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/ |
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Tyco Electronics |
Radar Pulsed Power Transistor - 40 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Ma |
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Tyco Electronics |
Radar Pulsed Power Transistor/ 4W/ loops Pulse/ 10% Duty 1.2 - 1.4 GHz NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package Abso |
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Tyco Electronics |
Radar Pulsed Power Transistor/ SW/ 1 .Oms Pulse/ 10% Duty 1.2 - 1.4 GHz l l l l l l l l 903 (22 85) J NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Met |
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Tyco Electronics |
Radar Pulsed Power Transistor/ SW/ loops Pulse/ 10% Duty 1.2 - 1.4 GHz NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization SystemInternal Input Impedance Matching Herrktic Metal/Ceramic Package Absol |
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Tyco Electronics |
Radar Pulsed Power Transistor/ lOOW/ 2ms Pulse/ 20% Duty 1.2 - 1.4 GHz _-_-. - NPN Silicon Microwave Power Transisror Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Meta |
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