| No. | Partie # | Fabricant | Description | Fiche Technique |
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Tuofeng Semiconductor |
P-Channel MOSFET · Advanced Trench Process Technology · High Density Cell Design for Ultra Low On-Resistance · Lead free product is acquired · SOP-8 Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID Drain-Source Voltage Gate-Source Vol |
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Tuofeng Semiconductor |
P-Channel MOSFET · Advanced Trench Process Technology · High Density Cell Design for Ultra Low On-Resistance · Lead free product is acquired · SOP-8 Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID Drain-Source Voltage Gate-Source Vol |
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Tuofeng Semiconductor |
P-Channel MOSFET VDS (V) = -30V ID = -6.1 A RDS(ON) < 46mΩ (VGS = -10V) RDS(ON) < 61mΩ (VGS = -4.5V) RDS(ON) < 117mΩ (VGS = -2.5V) SOIC-8 Top View SD SD SD GD D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage V |
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Tuofeng Semiconductor |
N-Channel MOSFET VDS (V) = 30V ID = 12A RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) RDS(ON) < 22mΩ (VGS = 2.5V) SD SD SD GD SOIC-8 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source V |
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