| No. | Partie # | Fabricant | Description | Fiche Technique |
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Truesemi |
N-Channel MOSFET Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduc |
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Truesemi |
N-Channel MOSFET Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduc |
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Truesemi |
N-Channel MOSFET Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduc |
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Truesemi |
N-Channel MOSFET Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduc |
|
|
|
|
Truesemi |
N-Channel MOSFET Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduc |
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Truesemi |
N-Channel MOSFET • 700V @TJ = 150 ℃ • Typ. RDS(on) = 0.38Ω • Ultra Low gate charge (typ. Qg = 38nC) • 100% avalanche tested TO-252 Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current -Continuous (TC = 2 |
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Truesemi |
N-Channel MOSFET Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduc |
|
|
|
|
Truesemi |
N-Channel MOSFET Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduc |
|
|
|
|
Truesemi |
N-Channel MOSFET Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduc |
|
|
|
|
Truesemi |
N-Channel MOSFET Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduc |
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|
Truesemi |
N-Channel MOSFET • 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.42Ω • Ultra Low gate charge (typ. Qg = 35nC) • 100% avalanche tested TO-252 Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -C |
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Truesemi |
N-Channel MOSFET Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduc |
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|
Truesemi |
N-Channel MOSFET • 650V @TJ = 150 ℃ • Typ. RDS(on) = 0.34Ω • Ultra Low gate charge (typ. Qg = 38nC) • 100% avalanche tested TO-252 Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current -Con |
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Truesemi |
N-Channel MOSFET • 1.9A,600V,Max.RDS(on)=5.00 Ω @ VGS =10V • Low gate charge(typical 9nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EA |
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Truesemi |
N-Channel MOSFET • 7.8A,200V,Max.RDS(on)=0.4 Ω @ VGS =10V • Low gate charge(typical 20nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EA |
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Truesemi |
N-Channel MOSFET Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduc |
|
|
|
|
Truesemi |
N-Channel MOSFET Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduc |
|
|
|
|
Truesemi |
N-Channel MOSFET Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduc |
|
|
|
|
Truesemi |
N-Channel MOSFET • 750V @TJ = 150 ℃ • Typ. RDS(on) = 0.42Ω • Ultra Low gate charge (typ. Qg = 38nC) • 100% avalanche tested TO-252 Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current -Con |
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Truesemi |
N-Channel MOSFET • 2.8A,600V,Max.RDS(on)=2.50 Ω @ VGS =10V • Low gate charge(typical 16nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS E |
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