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TriQuint Semiconductor TQM DataSheet

No. Partie # Fabricant Description Fiche Technique
1
TQM6M4002

TriQuint Semiconductor
DCS/PCS Transmit Module

• Ultra Compact Size
  – 6.0x6.0x1.1mm3.
• High System Efficiency
  – GSM850 40%, GSM900 45% , DCS/PCS 38%
• Integrated Power and SP6T Control
• Integrated SP6T pHEMT Switch
• Free choice of Rx ports for band selection
• Integrated Low Pass Tx Harmonics
Datasheet
2
TQM3M7001

TriQuint Semiconductor
802.11a/b/g Low Noise Amplifier Module

• Fully Integrated, Dualband Low Noise Amplifier Module for 802.11a/b/g WLAN Systems Internally Matched input/output No External Components Required Full World Band Frequency Operation Temperature Compensated Bias Network LNA Shutdown Control Single
Datasheet
3
TQM713024

TriQuint Semiconductor
3V GaAs HBT CDMA / WCDMA Cellular Power Amplifier Module



• InGaP HBT Technology High Efficiency: 39% @ 28dBm Capable of running as 0-bit PA in low bias mode to 28dBm Supports new chipsets with [email protected] Low Leakage Current: <1uA Optimized for 50 ohm System Small 8-pin, 3x3mm module Excellent Rx band no
Datasheet
4
6M4003

TriQuint Semiconductor
TQM6M4003

• Ultra Compact Size
  – 6.0x6.0x1.1mm3.
• High System Efficiency
  – GSM850 40%, GSM900 44% , DCS/PCS 38%
• Integrated Power and SP6T Control
• Integrated SP6T pHEMT Switch
• Free choice of Rx ports for band selection
• Integrated Low Pass Tx Harmonics
Datasheet
5
TQM7M5012

TriQuint Semiconductor
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module











• Ultra-small 5x5mm form factor GSM/EDGE Multi-Mode Capability - 90 dBm Typical Rx Noise - 38 dB Typical ACPR (200KHz) - 66 dB Typical ACPR (400 KHz) - 76 dB Typical ACPR (600 KHz) 1% Typical EVM rms > 50 dB Typical Dynamic Range
Datasheet
6
TQM829007

TriQuint Semiconductor
Digital Variable Gain Amplifier









 0.6-1.0 GHz Frequency Range 31.5 dB Maximum Gain at 0.9 GHz 31.5 dB Gain Range in 0.5 dB Steps +40 dBm Output IP3 +24.3 dBm Output P1dB 2.1 dB Noise Figure at Max. Gain State Fully Internally Matched Module Integrated Blocking Capac
Datasheet
7
TQM2M9016

TriQuint Semiconductor
GPS-SDARS Antenna Diplexer





 GPS/SDARS Diplexer Size : 3.0 X 3.0 X 1.2 mm Laminate based over molded module No external matching required for 50Ω operation To be qualified for Automotive Applications Functional Block Diagram GND LOW ANT GND GND HIGH www.DataSheet
Datasheet
8
TQM700017

TriQuint Semiconductor
LTE Power Amplifier Module with Coupler








 Small 10-pin 3x3mm module Integrated high performance coupler Built-in Vreg functionality eliminating the need for external components Low quiescent current provides excellent talk-time Excellent linearity TriQuint’s GaAs BiHEMT / CuF
Datasheet
9
TQM776003

TriQuint Semiconductor
WCDMA / HSUPA Power Amplifier Module with Coupler


• GaAs InGaP HBT PA Technology Typical Quiescent Current values: LPM: 6mA (LPM able to operate up to +13dBm) MPM: 20mA HPM: 85mA Excellent Linearity in all modes Integrated high performance coupler Built-in voltage regulator functionality eliminati
Datasheet
10
TQM7M5005H

TriQuint Semiconductor
Quad-Band GSM / GPRS / EDGE-Linear Power Amplifier Module
DCS / PCS In DCS / PCS Out Mode Select Band Select VBATT VRAMP TX_EN Power Control Logic GSM 850 / 900 In GSM 850 / 900 Out Product Description The TQM7M5005H is an extremely small (5x5x1.0mm3) multi-mode power amplifier module for GSM/EDGE appli
Datasheet
11
TQM7M5012H

TriQuint Semiconductor
Quad-Band GSM / GPRS / EDGE-Polar Power Amplifier Module












• Ultra-small 5x5mm form factor Halogen-Free GSM/EDGE Multi-Mode Capability - 90 dBm Typical Rx Noise - 38 dBc Typical ACPR (200KHz) - 66 dBc Typical ACPR (400 KHz) - 76 dBc Typical ACPR (600 KHz) 1% Typical EVM rms > 50 dB Typi
Datasheet
12
TQM616025

TriQuint Semiconductor
WCDMA / HSUPA PA-Duplexer Module

 RFIN Match Functional Block Diagram

 ANT Power Detector Bias Control VMODE VBA VCCBIAS VCC1 VCC2 Product Description www.DataSheet.net/ RXOUT VEN VDET



 The Tritium III PAD™ is an integrated 3V Linear Power Amplifier, Duplexer a
Datasheet
13
TQM679002A

TriQuint Semiconductor
2.4 GHz WLAN Power Amplifier + Switch MMIC







 Fully Integrated, 802.11b/g/n + BT front-end module Internally matched input/output Integrated directional detector Temperature Compensated Bias Network Single battery voltage of 2.3V-5.5V Leadless 3.0 x 3.0 x 0.45 mm SMT Pb-Free Pout =
Datasheet
14
TQM713019

TriQuint Semiconductor
3V HBT GaAs CDMA 4x4mm Power Amplifier Module
10 Functional Block Diagram Vref 1 GND Vmode 2 1 Bit Bias Control 9 GND GND 3 8 RFout










• RFin 4 7 GND Vcc1 5 6 Vcc2 Product Description The TQM713019 is a 3V, 2 stage GaAs HBT Power Amplifier Module designed fo
Datasheet
15
TQM7138

TriQuint Semiconductor
3V HBT SiGe CDMA 4x4mm POWER AMPLIFIER MODULE
§ Analog continuous bias capability with excellen linearity over 1.9 to 3.0VDC and temperature stability over
  –30C to 85C Excellent PAE Small 10 pin 4x4mm module 1xRTT Compatible Industry compatible digital quiescent current state control Analog cont
Datasheet
16
TQM7M4006

TriQuint Semiconductor
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module










• Very compact size
  – 5×5×1.1 mm3. Positive supply voltage
  – 2.9 to 4.5 V. High efficiency
  – typical GSM850 50%, GSM900 55%, DCS 50%, PCS 50%. CMOS internal closed-loop power control. 55 dB dynamic control range. GPRS class 12 compa
Datasheet
17
TQM7M4012

TriQuint Semiconductor
3V QUAD - BRAND GSM850/900 DCS/PCS POWER AMPLIFIER MODULE
1 0 - ( 0 4A6 4 0 4A B0 0 4A6 ? 03C ( ( ≤ !, 2 A6 ? " % 2 3 0 - 64≤ 6 ? ,2 D % 2 04 D 0464 E)) 0 E& η 03C D 03C A6 ? A6 ? A6 ? ) D @ " # @"$ 61. 03C D03C ) D @@ # $!% 61. 03C D03C "% % % %@ ! %H! %H! 9 9 , F % 2 G 03C G " %
Datasheet
18
TQM7M4022

TriQuint Semiconductor
3V Quad-Band GSM850/900/DCS/PCS Power Amplifier Module

• Very compact size
  – 7x7x1.3mm³
• High efficiency
  – typical GSM850 53%, GSM900 58%, DCS 50%, PCS 50%.
• Positive supply voltage
  – 3.0 to 4.5 V.
• No reference voltage needed
• 50 Ω input and output impedances.
• GPRS class 12 compatible.
• CMOS ban
Datasheet
19
TQM7M4014

TriQuint Semiconductor
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module

• Very compact size
  – 10×7×1.4 mm3.
• High efficiency
  – typical GSM850 47%, GSM900 56%, DCS 51%, PCS 50%.
• Positive supply voltage
  – 2.9 to 4.5 V.
• 50 Ω input and output impedances.
• GPRS class 12 compatible.
• CMOS band select and internal close
Datasheet
20
TQM7M6001

TriQuint Semiconductor
nullPrecision / 100UA Gain Selectable Amplifier
VCC2 GND RFOUT GND GND









• Very compact size
  – 4 x 4 x 1.1mm³ For 3G UMTS designs in IMT2100 band High/low output power modes High efficiency
  – high mode 40% typical Supports low collector voltage operation Low Vref of 2.85V nominal
Datasheet



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