No. | Partie # | Fabricant | Description | Fiche Technique |
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TriQuint Semiconductor |
DCS/PCS Transmit Module • Ultra Compact Size – 6.0x6.0x1.1mm3. • High System Efficiency – GSM850 40%, GSM900 45% , DCS/PCS 38% • Integrated Power and SP6T Control • Integrated SP6T pHEMT Switch • Free choice of Rx ports for band selection • Integrated Low Pass Tx Harmonics |
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TriQuint Semiconductor |
802.11a/b/g Low Noise Amplifier Module • Fully Integrated, Dualband Low Noise Amplifier Module for 802.11a/b/g WLAN Systems Internally Matched input/output No External Components Required Full World Band Frequency Operation Temperature Compensated Bias Network LNA Shutdown Control Single |
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TriQuint Semiconductor |
3V GaAs HBT CDMA / WCDMA Cellular Power Amplifier Module • • • InGaP HBT Technology High Efficiency: 39% @ 28dBm Capable of running as 0-bit PA in low bias mode to 28dBm Supports new chipsets with [email protected] Low Leakage Current: <1uA Optimized for 50 ohm System Small 8-pin, 3x3mm module Excellent Rx band no |
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TriQuint Semiconductor |
TQM6M4003 • Ultra Compact Size – 6.0x6.0x1.1mm3. • High System Efficiency – GSM850 40%, GSM900 44% , DCS/PCS 38% • Integrated Power and SP6T Control • Integrated SP6T pHEMT Switch • Free choice of Rx ports for band selection • Integrated Low Pass Tx Harmonics |
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TriQuint Semiconductor |
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module • • • • • • • • • • • Ultra-small 5x5mm form factor GSM/EDGE Multi-Mode Capability - 90 dBm Typical Rx Noise - 38 dB Typical ACPR (200KHz) - 66 dB Typical ACPR (400 KHz) - 76 dB Typical ACPR (600 KHz) 1% Typical EVM rms > 50 dB Typical Dynamic Range |
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TriQuint Semiconductor |
Digital Variable Gain Amplifier 0.6-1.0 GHz Frequency Range 31.5 dB Maximum Gain at 0.9 GHz 31.5 dB Gain Range in 0.5 dB Steps +40 dBm Output IP3 +24.3 dBm Output P1dB 2.1 dB Noise Figure at Max. Gain State Fully Internally Matched Module Integrated Blocking Capac |
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TriQuint Semiconductor |
GPS-SDARS Antenna Diplexer GPS/SDARS Diplexer Size : 3.0 X 3.0 X 1.2 mm Laminate based over molded module No external matching required for 50Ω operation To be qualified for Automotive Applications Functional Block Diagram GND LOW ANT GND GND HIGH www.DataSheet |
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TriQuint Semiconductor |
LTE Power Amplifier Module with Coupler Small 10-pin 3x3mm module Integrated high performance coupler Built-in Vreg functionality eliminating the need for external components Low quiescent current provides excellent talk-time Excellent linearity TriQuint’s GaAs BiHEMT / CuF |
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TriQuint Semiconductor |
WCDMA / HSUPA Power Amplifier Module with Coupler • • GaAs InGaP HBT PA Technology Typical Quiescent Current values: LPM: 6mA (LPM able to operate up to +13dBm) MPM: 20mA HPM: 85mA Excellent Linearity in all modes Integrated high performance coupler Built-in voltage regulator functionality eliminati |
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TriQuint Semiconductor |
Quad-Band GSM / GPRS / EDGE-Linear Power Amplifier Module DCS / PCS In DCS / PCS Out Mode Select Band Select VBATT VRAMP TX_EN Power Control Logic GSM 850 / 900 In GSM 850 / 900 Out Product Description The TQM7M5005H is an extremely small (5x5x1.0mm3) multi-mode power amplifier module for GSM/EDGE appli |
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TriQuint Semiconductor |
Quad-Band GSM / GPRS / EDGE-Polar Power Amplifier Module • • • • • • • • • • • • Ultra-small 5x5mm form factor Halogen-Free GSM/EDGE Multi-Mode Capability - 90 dBm Typical Rx Noise - 38 dBc Typical ACPR (200KHz) - 66 dBc Typical ACPR (400 KHz) - 76 dBc Typical ACPR (600 KHz) 1% Typical EVM rms > 50 dB Typi |
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TriQuint Semiconductor |
WCDMA / HSUPA PA-Duplexer Module RFIN Match Functional Block Diagram ANT Power Detector Bias Control VMODE VBA VCCBIAS VCC1 VCC2 Product Description www.DataSheet.net/ RXOUT VEN VDET The Tritium III PAD™ is an integrated 3V Linear Power Amplifier, Duplexer a |
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TriQuint Semiconductor |
2.4 GHz WLAN Power Amplifier + Switch MMIC Fully Integrated, 802.11b/g/n + BT front-end module Internally matched input/output Integrated directional detector Temperature Compensated Bias Network Single battery voltage of 2.3V-5.5V Leadless 3.0 x 3.0 x 0.45 mm SMT Pb-Free Pout = |
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TriQuint Semiconductor |
3V HBT GaAs CDMA 4x4mm Power Amplifier Module 10 Functional Block Diagram Vref 1 GND Vmode 2 1 Bit Bias Control 9 GND GND 3 8 RFout • • • • • • • • • • • RFin 4 7 GND Vcc1 5 6 Vcc2 Product Description The TQM713019 is a 3V, 2 stage GaAs HBT Power Amplifier Module designed fo |
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TriQuint Semiconductor |
3V HBT SiGe CDMA 4x4mm POWER AMPLIFIER MODULE § Analog continuous bias capability with excellen linearity over 1.9 to 3.0VDC and temperature stability over –30C to 85C Excellent PAE Small 10 pin 4x4mm module 1xRTT Compatible Industry compatible digital quiescent current state control Analog cont |
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TriQuint Semiconductor |
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module • • • • • • • • • • Very compact size – 5×5×1.1 mm3. Positive supply voltage – 2.9 to 4.5 V. High efficiency – typical GSM850 50%, GSM900 55%, DCS 50%, PCS 50%. CMOS internal closed-loop power control. 55 dB dynamic control range. GPRS class 12 compa |
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TriQuint Semiconductor |
3V QUAD - BRAND GSM850/900 DCS/PCS POWER AMPLIFIER MODULE 1 0 - ( 0 4A6 4 0 4A B0 0 4A6 ? 03C ( ( ≤ !, 2 A6 ? " % 2 3 0 - 64≤ 6 ? ,2 D % 2 04 D 0464 E)) 0 E& η 03C D 03C A6 ? A6 ? A6 ? ) D @ " # @"$ 61. 03C D03C ) D @@ # $!% 61. 03C D03C "% % % %@ ! %H! %H! 9 9 , F % 2 G 03C G " % |
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TriQuint Semiconductor |
3V Quad-Band GSM850/900/DCS/PCS Power Amplifier Module • Very compact size – 7x7x1.3mm³ • High efficiency – typical GSM850 53%, GSM900 58%, DCS 50%, PCS 50%. • Positive supply voltage – 3.0 to 4.5 V. • No reference voltage needed • 50 Ω input and output impedances. • GPRS class 12 compatible. • CMOS ban |
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TriQuint Semiconductor |
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module • Very compact size – 10×7×1.4 mm3. • High efficiency – typical GSM850 47%, GSM900 56%, DCS 51%, PCS 50%. • Positive supply voltage – 2.9 to 4.5 V. • 50 Ω input and output impedances. • GPRS class 12 compatible. • CMOS band select and internal close |
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TriQuint Semiconductor |
nullPrecision / 100UA Gain Selectable Amplifier VCC2 GND RFOUT GND GND • • • • • • • • • • Very compact size – 4 x 4 x 1.1mm³ For 3G UMTS designs in IMT2100 band High/low output power modes High efficiency – high mode 40% typical Supports low collector voltage operation Low Vref of 2.85V nominal |
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