| No. | Partie # | Fabricant | Description | Fiche Technique |
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TriQuint Semiconductor |
2.4mm Discrete HFET |
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TriQuint Semiconductor |
9.6mm Discrete HFET |
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TriQuint Semiconductor |
DC - 20 GHz Discrete power pHEMT and Performance Frequency Range: DC - 20 GHz > 28 dBm Nominal Psat 58% Maximum PAE 36 dBm Nominal OIP3 13 dB Nominal Power Gain Suitable for high reliability applications 0.6mm x 0.35 m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 45-75mA (Under RF Dri |
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TriQuint Semiconductor |
DC - 20 GHz Discrete power pHEMT and Performance Frequency Range: DC - 20 GHz > 34 dBm Nominal Psat 58% Maximum PAE 42 dBm Nominal OIP3 13 dB Nominal Power Gain Suitable for high reliability applications 2.4mm x 0.35 m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 180-300mA (Under RF D |
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TriQuint Semiconductor |
DC - 12 GHz Discrete power pHEMT and Performance • Frequency Range: DC - 12 GHz • > 39 dBm Nominal Psat • 59% Maximum PAE • 11 dB Nominal Power Gain • Suitable for high reliability applications • 8mm x 0.35μm Power pHEMT • Nominal Bias Vd = 8-12V, Idq = 600-1000mA (Under RF Drive, I |
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TriQuint Semiconductor |
300um Discrete pHEMT and Performance • 0.25um pHEMT Technology • DC 22 GHz Frequency Range • 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation • Floating Source Configuration • Chip Dimensions 0.5080 mm x 0.4064 mm Primary Applications • Low Noise amplifiers 17 |
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TriQuint Semiconductor |
300um Discrete pHEMT and Performance • 0.25um pHEMT Technology • DC 22 GHz Frequency Range • 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation • Floating Source Configuration • Chip Dimensions 0.620 mm x 0.514 mm Primary Applications • Low Noise amplifiers 17 F |
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TriQuint Semiconductor |
12 mm Discrete HFET 1V Vg = -1.3 V Vg = -1.5 V 30 29 28 27 14 13 Gain (dB) 12 11 10 9 8 14 15 Vg = -1.1V Vg = -1.3 V Vg = -1.5 V 16 17 18 19 20 21 22 23 Input Power (dBm) 24 25 26 27 28 TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 Web: www.triqu |
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TriQuint Semiconductor |
18 mm Discrete HFET 14 13 Gain (dB) 12 11 10 9 8 7 20 Vg = -1.1 V Vg = -1.3 V Vg = -1.5 V 21 22 23 24 25 26 27 Input Power (dBm) 28 29 30 31 TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 Web: www.triquint.com TGF4118-EPU RF Performance for Vd = 8 |
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TriQuint Semiconductor |
4.8 mm Discrete HFET t.com TGF4250-EEU p EXAMPLE OF DC I-V CURVES 1.1 1 0.9 VG = 0.0 to -2.25 V (0.25 V steps) T A=65°C Drain Current (A) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 5 6 7 8 9 10 Drain Voltage (V) OUTPUT POWER VS. INPUT POWER Output Power (dBm) 3 |
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TriQuint Semiconductor |
DC - 12 GHz Discrete power pHEMT and Performance Frequency Range: DC - 12 GHz > 33 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 2mm x 0.35 m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 150-250mA (Under RF Drive, Id rises from 15 |
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TriQuint Semiconductor |
DC-4 GHz Packaged Power pHEMT • • Frequency Range: DC-4 GHz Package Dimensions: 4.5 x 4 x 1.5 mm Nominal 900 MHz Low Noise Application Board Performance: • OTOI: 39.5 dBm • Noise Figure: 0.6dB • Gain: 16dB • P1dB: 26.5dBm • Input Return Loss: -8 dB • Output Return Loss: -18 dB • |
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TriQuint Semiconductor |
Ku Band Discrete Power pHEMT and Performance Frequency Range: DC - 20 GHz > 37 dBm Nominal Psat 58% Maximum PAE 45 dBm Nominal OIP3 13 dB Nominal Power Gain Suitable for high reliability applications 4.8mm x 0.35μm Power pHEMT Nominal Bias Vd = 8-12V, Idq = 360-600mA (Under RF D |
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TriQuint Semiconductor |
Ku Band Discrete Power pHEMT and Performance Frequency Range: DC - 20 GHz > 38 dBm Nominal Psat 57% Maximum PAE 12 dB Nominal Power Gain Suitable for high reliability applications 6.0mm x 0.35um Power pHEMT Nominal Bias Vd = 8-12V, Idq = 448-752mA (Under RF Drive, Id rises from |
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TriQuint Semiconductor |
50 Watt Discrete Power GaN on SiC HEMT • • • • • • • Frequency Range: DC - 18 GHz 46.7 dBm Nominal Psat at 3 GHz 55% Maximum PAE 17.5 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 1 A, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC Chip Dimensions: 0.82 x 2.48 x 0.10 mm Pri |
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TriQuint Semiconductor |
1.2 mm HFET and Performance • • • • • • Nominal Pout of 28.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 55 % at 8.5 GHz 1200 µm HFET 0.61 x 0.74 x 0.1 mm (0.024 x 0.029 x 0.004 in) Bias at 8 Volts, 96 mA Primary Applications • • • Cellular |
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TriQuint Semiconductor |
2.4 mm HFET and Performance • • • • • • • 2400 µm x 0.5 µm HFET Nominal Pout of 31.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 56 % at 8.5 GHz Frequency Range: DC - 12 GHz Suitable for high reliability applications 0.6 x 1.0 x 0.1 mm (0.02 |
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TriQuint Semiconductor |
9.6 mm HFET and Performance • • • • • • • 9600 µm x 0.5 µm HFET Nominal Pout of 37dBm at 6 GHz Nominal Gain of 9.5dB at 6 GHz Nominal PAE of 52% at 6 GHz Frequency Range: DC - 10.5 GHz Suitable for high reliability applications 0.6 x 2.4 x 0.1 mm (0.024 x 0.093 |
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TriQuint Semiconductor |
1 Watt GaAs HFET • Frequency Range: DC-4 GHz Nominal 900 MHz Application Board Performance: • TOI: 44 dBm • 31 dBm Psat, 30 dBm P1dB • Gain: 18 dB • Input Return Loss: -15 dB • Output Return Loss: -7 dB • Bias: Vd = 8 V, Id = 200 mA, Vg = -1.0 V (Typical) • Package D |
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TriQuint Semiconductor |
400 um Discrete GaAs pHEMT • Frequency Range: DC - 20 GHz • 26 dBm Typical Output Power - P1dB • 13 dB Typical Gain at 12 GHz • 55% Typical PAE at 12 GHz • 1.1 dB Typical NF at12 GHz • No Vias • Technology: 0.25 um GaAs pHEMT • Chip Dimensions: 0.41 x 0.34 x 0.10 mm Functiona |
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