No. | Partie # | Fabricant | Description | Fiche Technique |
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TriQuint Semiconductor |
GaAs Low Noise Amplifier • Frequency Range: 22 – 32 GHz • Noise Figure: 1.6 dB (typical) • Small Signal Gain: 23 dB (typical) • P1dB: 19 dBm (typical) • IM3: −54 dBc (Pout=0 dBm/tone) (typical) • Bias: VD = 3.5 V, IDQ = 90 mA, VG = −0.46 V (typical) • Plastic Overmolded Pack |
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TriQuint Semiconductor |
GaAs Low Noise Amplifier • Frequency Range: 17 – 22 GHz • Noise Figure: 1.3 dB (typical) • Small Signal Gain: 25 dB (typical) • P1dB: 20 dBm (typical) • IM3: −55 dBc (typical) (Pout=0 dBm/tone) • Bias: VD = 3.5 V, IDQ = 90 mA, VG = −0.46 V (typical) • Plastic Overmolded Pack |
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TriQuint Semiconductor |
High Linearity Amplifier 400-4200 MHz +27.2 dBm P1dB +44 dBm Output IP3 17 dB Gain at 2140 MHz +5 V Single Supply, 130 mA ICQ Internal RF overdrive protection Internal DC overvoltage protection On chip ESD protection 3x3 mm QFN Package General Description T |
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TriQuint Semiconductor |
10W GaN Power Amplifier Frequency Range: 0.03 – 2.5 GHz PSAT: >40 dBm at PIN = 27 dBm PAE: >48% Large Signal Gain: >13 dB Small Signal Gain: >18.5 dB Input Return Loss: >9 dB Output Return Loss: >9.5 dB Bias: VD = 32 V, IDQ = 360 mA, VG = -2.1 V Typical Wi |
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TriQuint Semiconductor |
GaAs Low Noise Amplifier Frequency Range: 25 –31 GHz Noise Figure: 1.7 dB (typical) Small Signal Gain: 22 dB (typical) P1dB: 19 dBm (typical) IM3: −53 dBc (Pout=0 dBm/tone) (typical) Bias: VD = 3.5 V, IDQ = 90 mA, VG = −0.46 V (typical) Die Dimensions: 2.40 x 1. |
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