logo

Transys BAW DataSheet

No. Partie # Fabricant Description Fiche Technique
1
BAW56T

Transys
SWITCHING DIODE
Power dissipation PD: 150 mW (Tamb=25℃) Forward Current IF: Reverse Voltage 75 m A VR: 85 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ SOT-523 BAS16T Marking: A2 BAW56T Marking: JD BAV70T Marking: JJ BAV99T Ma
Datasheet



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact