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ToshibaSemiconductor |
HIGH EFFICIENCY DIODE STACK usly under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating tem |
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ToshibaSemiconductor |
HIGH EFFICIENCY DIODE STACK ) Reverse Recovery Time (Note 1) Forward Recovery Time (Note 1) Thermal Resistance VFM IFM = 10A IRRM trr tfr Rth (j−c) VRRM = Rated IF = 2.0A, di / dt = −50A / µs IF = 1.0A DC Total, Junction to Case Note 1: A value applied to one cell. POL |
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ToshibaSemiconductor |
HIGH EFFICIENCY DIODE STACK y significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“ |
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ToshibaSemiconductor |
HIGH EFFICIENCY DIODE STACK significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design |
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ToshibaSemiconductor |
SCHOTTKY BARRIER RECTIFIER STACK ntly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Preca |
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ToshibaSemiconductor |
SCHOTTKY BARRIER RECTIFIER STACK cell. POLARITY JEDEC ― JEITA ― TOSHIBA 12-10C1A Weight: 2.0 g (typ.) TYP. MAX UNIT ― 0.47 V ― 10 mA 680 ― pF ― 2.7 °C / W 1 2004-07-07 MARKING 20FWJ2CZ Characteristics indicator 20FWJ2CZ47M Abbreviation Code 20FWJ2CZ Part No. 20FW |
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