| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS • • • Power supply voltage of 2.7 to 3.3 V Operating temperature of −30° to 85°C Package P-TFBGA81-0710-0.80BZ (Weight: 0.15 g) Nor Flash Memory Features • • Organization: 8M × 16 bits Power dissipation Read operating : 55 mA maximum Address Increme |
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Toshiba |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS • • • Power supply voltage of 2.7 to 3.3 V Operating temperature of −30° to 85°C Package P-TFBGA81-0710-0.80BZ (Weight: 0.15 g) Nor Flash Memory Features • • Organization: 8M × 16 bits Power dissipation Read operating : 55 mA maximum Address Increme |
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