No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba |
Presettable Up/Down Counter |
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Toshiba |
Silicon PNP Transistor erature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual rel |
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Toshiba |
Presettable Binary Up/Down Counter |
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Toshiba |
Presettable Up/Down Counter |
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Toshiba |
Silicon PNP Transistors (1) High collector voltage (2) Small collector output capacitance (3) High transition frequency (4) Complementary to TTC011B : VCEO = -230 V (min) : Cob = 30 pF (typ.) : fT = 70 MHz (typ.) 3. Packaging and Internal Circuit (Note) TTA006B 1. Emitt |
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Toshiba |
Silicon PNP Epitaxial Type Transistor ificantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling |
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Toshiba |
(TC40103BP) 8-State Presettable Synchronous Down Counter |
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Toshiba Semiconductor |
DUAL PRECISION RETRIGGERABLE/RESETTABLE MONOSTABLE MULTIVIBRATOR • twOUT = 10 ms ± 5% (at RX = 100 kΩ CX = 0.1 μF, VDD = 10 V) Pin Assignment TC4538BP TC4538BF Weight DIP16-P-300-2.54A SOP16-P-300-1.27A : 1.00 g (typ.) : 0.18 g (typ.) Truth Table (Note) Inputs A B CD HH LH HH LH **L Outputs QQ LH LH LH Note |
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Toshiba |
(TC40192BP / TC40193BP) Presettable Up/Down Counter |
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Toshiba |
Presettable BCD Up/Down Counter |
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Toshiba |
(TC40192BP / TC40193BP) Presettable Up/Down Counter |
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Toshiba |
Presettable Binary Up/Down Counter |
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Toshiba Semiconductor |
Silicon PNP Transistor tage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. r |
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Toshiba |
SYNCHROMOUS PRESETTABLE 4-BIT COUNTER • High speed: fmax = 185 MHz (typ.) at VCC = 5 V • Low power dissipation: ICC = 4 µA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Power down protection is provided on all inputs. • Balanced propagation delays: tpLH ∼− tpHL |
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Toshiba |
SYNCHROMOUS PRESETTABLE 4-BIT COUNTER • High speed: fmax = 185 MHz (typ.) at VCC = 5 V • Low power dissipation: ICC = 4 µA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Power down protection is provided on all inputs. • Balanced propagation delays: tpLH ∼− tpHL |
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Toshiba |
SYNCHROMOUS PRESETTABLE 4-BIT COUNTER • High speed: fmax = 185 MHz (typ.) at VCC = 5 V • Low power dissipation: ICC = 4 µA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Power down protection is provided on all inputs. • Balanced propagation delays: tpLH ∼− tpHL |
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Toshiba |
SYNCHROMOUS PRESETTABLE 4-BIT COUNTER |
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Toshiba |
SYNCHROMOUS PRESETTABLE 4-BIT COUNTER |
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Toshiba |
Synchronous Presettable 4-Bit Counter High speed: fmax = 185 MHz (typ.) at VCC = 5 V Low power dissipation: ICC = 4 μA (max) at Ta = 25°C High noise immunity: VNIH = VNIL = 28% VCC (min) Power down protection is provided on all inputs. Balanced propagation delays: tpLH ∼− tpHL |
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Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors (1) High DC current gain: hFE = 200 to 500 (IC = -0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.27 V (max) (IC = -1.6 A, IB = -53 mA) (3) High-speed switching: tf = 55 ns (typ.) 3. Packaging and Internal Circuit 1. Base 2. Colle |
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