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Toshiba TPS DataSheet

No. Partie # Fabricant Description Fiche Technique
1
TPS603A

Toshiba Semiconductor
Photo Transistor
Datasheet
2
TPS855

Toshiba
Photo-IC
s) ( Note 1 ) Symbol VCC VOUT IL P Topr Tstg Tsol Rating −0.5 to 7 Unit V V mA mW °C °C °C < = VCC 10 150 −25 to 85 −40 to 100 260 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the signific
Datasheet
3
TPS614

Toshiba Semiconductor
PHOTO TRANSISTOR
Datasheet
4
TPS615

Toshiba Semiconductor
PHOTO TRANSISTOR
Datasheet
5
TPS616

Toshiba Semiconductor
PHOTO TRANSISTOR
Datasheet
6
TPS850

Toshiba Semiconductor
Photo-IC
0 -30 to 85 -40 to 100 260 Unit V V mA mW °C °C °C Note 1: The reflow time and the recommended temperature profile are shown in the section entitled Handling Precautions. Recommended Operating Conditions Characteristics Supply voltage Symbol VCC Mi
Datasheet
7
TPS820F

Toshiba Semiconductor
Photo-IC
Light current Power dissipation Power dissipation derating Operating temperature range Storage temperature range Soldering temperature (5 s) (Note1) Symbol VCC VO IL P ΔP/°C Topr Tstg Tsol Rating −0.5~7 Unit V V mA mW mW/°C °C °C °C < = VCC 10 250 −
Datasheet
8
TPS853

Toshiba
Photo-IC
t light : Light current variation width: ×1.67 (when light current classification is specified.) : Little temperature fluctuation in light current Built-in luminous-efficiency correction function, reduced sensitivity variations due to various light s
Datasheet
9
TPS852

Toshiba
Photo-IC
03 g (typ.) : Light current variation width: ×1.67 (when light current classification is specified.) : Little temperature fluctuation Built-in luminous-efficiency correction function, reduced sensitivity variations due to various light sources : IL (
Datasheet
10
TPS621

Toshiba Semiconductor
NPN Photo Transistor
Datasheet
11
TPS622

Toshiba Semiconductor
Silicon NPN Transistor
n temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliab
Datasheet
12
TPS625

Toshiba Semiconductor
NPN Photo Transistor
Datasheet
13
TPS626

Toshiba Semiconductor
NPN Photo Transistor
Datasheet
14
TPS705

Toshiba Semiconductor
SILICON PIN PHOTO DIODE
Datasheet
15
TPS818

Toshiba Semiconductor
Photo-IC
= 560 mm (typ.) Open-emitter output Side-view package Environmentally friendly silicon used as chip material instead of CdS Suitable as a substitute for CdS-based products TOSHIBA Weight: 0.22 g (typ.) ― Unit: mm Pin Connection 4.VCC Current amp 3.
Datasheet
16
TPS812

Toshiba Semiconductor
Photo-IC
Datasheet
17
TPS814

Toshiba Semiconductor
Photo-IC
Datasheet
18
TPS606

Toshiba Semiconductor
TERMINAL OPTO-ELECTRONIC SWITCH
Datasheet
19
TPS806

Toshiba Semiconductor
Photo-IC
Datasheet
20
TPS859

Toshiba
Photo-IC
00 lx using fluorescent light : Light current variation width: × 1.67 ( When light current Weight: 0.003 g (typ.) classification is specified.) : Little temperature fluctuation
• Built-in luminous-efficiency correction function, reduced sensitivity v
Datasheet



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