| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
2-IN-1 Low-Side Power Switch • Two built-in power IC chips with a new structure combining a control block and a vertical power MOSFET (L2-π-MOS) on each chip. • Can directly drive a power load from a CMOS or TTL logic. Weight: 0.08 g (typ.) • Built-in protection circuits agai |
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Toshiba |
High Voltage 3-phase motor driver IC Weight: 1.2 g (typ.) • High voltage power side and low voltage signal side terminal are separated. • It is the best for current sensing in three shunt resistance. • Bootstrap circuit gives simple high-side supply. • Bootstrap diodes are built in. • |
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Toshiba Semiconductor |
DC Brushless Motor-Driver • • • • • • • • • • High voltage power side and low voltage signal side terminal are separated. Bootstrap circuits give simple high-side supply. Bootstrap diodes are built in. PWM and 3-phase decode circuit are built in. Outputs Rotation pulse signal |
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Toshiba Semiconductor |
Silicon Monolithic Power MOS |
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Toshiba |
high-voltage PWM Controller ● High voltage power side and low voltage signal side terminal are separated. ● It is the best for current sensing in three shunt resistance. ● Bootstrap circuit gives simple high-side supply. ● Bootstrap diodes are built in. ● A dead time can be set |
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Toshiba |
Power MOSFET Gate Driver Built-in diagnostic functions for driver power supply and output voltage. Built-in charge pump circuit. SSOP30 package for surface mounting. AEC-Q100 qualified. SSOP30-P-300-0.65 Note: This product has a MOS structure and is sensitive to el |
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Toshiba |
Power MOSFET Gate Driver z Power MOSFET gate driver for half-bridge z High-side can operate P channel MOSFET, Low-side can operate N channel MOSFET z Housed in the PS-8 package and supplied in embossed carrier tape. Pin Assignment (top view) IN1 1 STBY 2 IN2 3 8 OUT1 7 VDD |
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Toshiba |
1-channel High-Side N channel Power MOSFET Gate Driver ● AEC-Q100 qualified. ● Built in the charge pump circuit. ● Built in the various protection feature and diagnostic output function. ‒ The abnormalities in power supply voltage (a voltage fall, excess voltage, reverse connection of power supply) ‒ Cur |
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Toshiba |
High Voltage Monolithic Silicon Power IC ● High voltage power side and low voltage signal side terminal are separated. ● It is the best for current sensing in three shunt resistance. ● Bootstrap circuit gives simple high-side supply. ● Bootstrap diodes are built in. ● A dead time can be set |
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Toshiba |
High Voltage Monolithic Silicon Power IC ● High voltage power side and low voltage signal side terminal are separated. ● Bootstrap circuits give simple high-side supply. ● Bootstrap diodes are built in. ● PWM and 3-phase decode circuit are built in. ● Pulses-per-revolution output: FGC = Hig |
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Toshiba |
DC Brushless Motor-Driver • • • • • • • • Bootstrap circuit gives simple high side power supply. Bootstrap diodes are built in. A dead time can be set as a minimum of 1.4 µs, and it is the best for a Sine-wave from drive. 3-phase bridge output using IGBTs. FRDs are built in. |
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Toshiba |
High Voltage Monolithic Silicon Power IC ● High voltage power side and low voltage signal side terminal are separated. ● It is the best for current sensing in three shunt resistance. ● Bootstrap circuit gives simple high-side supply. ● Bootstrap diodes are built in. ● A dead time can be set |
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Toshiba |
Power MOSFET Gate Driver Power MOSFET gate driver for 3-phase DC motor. Built-in power supply for driver and diagnosis function of output voltage. Built-in charge pump circuit. Package is provided with a WQFN32 embossed-tape packing. P-WQFN32-0505-0.50-002 Weight: 0 |
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Toshiba |
Power MOSFET Gate Driver z Power MOSFET gate driver for 3-phase DC motor z Built-in diagnosis function: under-voltage detection z Built-in charge pump circuit z Package: SSOP-24 (300 mil) with embossed-tape packing Pin Assignment (TOP VIEW) ENB 1 ROSC 2 IN1 3 IN2 4 IN3 5 IN |
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Toshiba |
High Voltage 3-phase motor driver IC Weight: 1.2 g (typ.) • High voltage power side and low voltage signal side terminal are separated. • It is the best for current sensing in three shunt resistance. • Bootstrap circuit gives simple high-side supply. • Bootstrap diodes are built in. • |
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Toshiba |
1-channel High-Side N channel MOSFET Gate Driver ● Charge pump circuit is built in. ● Built-in short circuit (overcurrent detection) and reverse battery protection. ● AEC-Q100 qualified. ● The package is a small surface mount type PS-8, and the packaging is embossed tape. Note: Due to its MOS stru |
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Toshiba Semiconductor |
Silicon Monolithic Power MOS l A monolithic power IC with a new structure combining a control block and a vertical power MOSFET (π-MOS) on a single chip. Built-in Protection circuits against overvoltage, load short circuiting, and thermal shutdown. l Can directly drive a power |
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Toshiba Semiconductor |
2-IN-1 Low-Side Switch • Two built-in power IC chips with a new structure combining a control block and a vertical power MOSFET (L2-π-MOS) on each chip. • Can directly drive a power load from a CMOS or TTL logic. Weight: 0.08 g (typ.) • Built-in protection circuits agai |
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Toshiba Semiconductor |
POWER MOSFET GATE DRIVER |
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Toshiba |
3-Phase DC Brush Less Motor Driver |
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