| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Toshiba Semiconductor |
SMT LEDs 3.2 (L) x 2.8 (W) x 3.4 (H) mm Size 2.8 mm Diameter Lens−Top Type InGaAlP Technology (Ultra High Brightness) Low Drive Current High Intensity Light Emission Clear Luminescence is obtained High Operating Temperture Standard Embossed Taping 8 mm Pitch |
|
|
|
|
Toshiba Semiconductor |
LEDs 5 mm Package InGaAlP Technology All Plastic Mold Type Fast Response Time, Capable of Pulse Operation High Power Luminous Intensity Applications Outdoor Message Signboard Safety equipment Automotive Series Line−Up Part Number TLOH156P TLRH156P www.Da |
|
|
|
|
Toshiba |
Photocouplers (1) Open voltage: 7 V (min) (2) Short current: 12 µA (min) (3) Isolation voltage: 3750 Vrms (min) (4) AEC-Q101 qualified 4. Packaging and Pin Assignment 11-4M1S 1: Anode (Input) 3: Cathode (Input) 4: Cathode (Output) 6: Anode (Output) ©2016-2018 T |
|
|
|
|
TOSHIBA |
PHOTOCOUPLER ng (Ta ≥ 70 °C) IF ∆IF/°C 25 -0.18 mA mA/°C LED Reverse voltage Input Power Dissipation VR 5 V PD 50 mW Input Power Dissipation Derating (Ta ≥ 70 °C) ∆PD/°C -0.61 mW/°C Junction temperature Tj 125 °C Off-state output terminal voltage |
|
|
|
|
TOSHIBA |
Infrared LED & Photo IC (1) Buffer logic type (totem pole output) (2) Package: SO6 (3) Operating temperature: -40 to 105 (4) Supply voltage: 2.7 to 5.5 V (5) Threshold input current: 1.0 mA (max) (6) Supply current: 0.3 mA (max) (7) Data transfer rate: 5 Mbps (typ.) (8) C |
|
|
|
|
TOSHIBA |
PHOTOCOUPLER |tpLH-tpHL|): 400 ns (max) It becomes TTL compatible by connecting the resistance. AEC-Q101 qualified JEDEC ― JEITA ― TOSHIBA 11-4L1 Weight: 0.08 g (typ.) Pin Configuration 1 3 1: ANODE 3: CATHODE 4: GND 5: VO (Output) 6: VCC Truth Tab |
|
|
|
|
TOSHIBA |
LED + Photo-IC Photocoupler ±10 kV/μs (min) @VCM=1500V Propagation delay time: tpHL, tpLH = 0.1 μs (min), tpHL = 0.8 μs (max) , tpLH = 1.0 μs (max) @IF = 7 mA, VCC = 15 V, RL=20 kΩ, Ta=25°C Propagation delay difference: 0.7 μs (max) (|tpLH−tpHL|) @IF = 7 mA, VCC = 15 V, RL= |
|
|
|
|
TOSHIBA |
LCD_Module 6 CN1-11 CN1-10 CN1-9 CN1-8 CN2-5 CN2-4 CN2-3 CN2-2 LP FP SCP UD7 UD6 UD5 UD4 LD7 LD6 LD5 LD4 UD3 UD2 UD1 UD0 LD3 LD2 LD1 LD0 INDUSTRIAL COMPUTERS INC. m o .c U 4 t e e h aS t a D . w w w CN1-7 VEE CN1-6,CN21,CN2-10 GND |
|
|
|
|
TOSHIBA |
PHOTOCOUPLER (1) Open voltage: 7 V (min) (2) Short current: 12 µA (min) (3) Isolation voltage: 3750 Vrms (min) (4) AEC-Q101 qualified 4. Packaging and Pin Assignment 11-4M1S 1: Anode (Input) 3: Cathode (Input) 4: Cathode (Output) 6: Anode (Output) ©2016-2020 T |
|
|
|
|
TOSHIBA |
PHOTOCOUPLER rd current derating (Ta ≥ 108 °C) ΔIF / °C -0.7 mA / °C LED Pulse forward current (Note 1) IFP 1 A Input Power Dissipation PD 50 mW Input Power Dissipation Derating (Ta≥50°C) ΔPD/°C -0.5 mW/°C Reverse voltage VR 5 V Collector-emitter v |
|
|
|
|
TOSHIBA |
PHOTOCOUPLER nput H L LED ON OFF M1 OFF ON M2 ON OFF Output L H Schematic IF 1＋ 3－ ICC VCC IO 6 VO 5 SHIELD GND 4 A ceramic capacitor (0.1 μF) should be connected from pin 6 (VCC) to pin 4 (GND) to stabilize the operation of the high gain linear amplifi |
|
|
|
|
TOSHIBA |
PHOTOCOUPLER Pin Configuration 1: ANODE 3: CATHODE 4: GND 5: VO (open collector) 6: VCC Truth Table Input H L LED ON OFF Output L H Schematic IF 1+ 3- ICC VCC IO 6 VO 5 SHIELD GND 4 A ceramic capacitor (0.1 μF) should be connected from pin 6 (VCC) to p |
|
|
|
|
Toshiba |
IRLED & Photo Transistor orward current IF 30 mA Forward current (Ta=125°C) IF 18 mA Forward current derating (Ta ≥ 108 °C) ΔIF/°C -0.7 mA/°C LED Pulse forward current (Note 1) IFP 1A Input Power Dissipation PD 50 mW Input Power Dissipation Derating (Ta ≥ 50°C) |
|
|
|
|
TOSHIBA |
PHOTOCOUPLER Forward current IF 30 mA Forward current (Ta=125°C) IF 18 mA Forward current derating (Ta ≥ 108 °C) ΔIF/°C -0.7 mA/°C LE D Pulse forward current (Note 1) IFP 1 A Input Power Dissipation PD 50 mW Input Power Dissipation Derating |
|
|
|
|
TOSHIBA |
PHOTOCOUPLER nt (Ta=125 °C) IF 18 mA Forward current derating(Ta ≥ 108 °C) ΔIF/°C -0.7 mA/°C LED Pulse forward current (Note 1) IFP 1A Input Power Dissipation PD 50 mW Input Power Dissipation Derating (Ta ≥ 50°C) ΔPD/°C -0.5 mW/°C Reverse voltage |
|
|
|
|
Toshiba |
Automotive MOSFET Gate Drivers Input power dissipation derating (Ta ≥ 100 °C) Input reverse voltage Output forward current Detector Output reverse voltage Output power dissipation (-40 °C ≤ Ta ≤ 125 °C) Operating temperature Storage temperature Common Lead soldering tempera |
|