Toshiba Semiconductor USF fiche technique

No.	Partie #	Fabricant	Description
1	USF5G49	Toshiba Semiconductor	(USF5x49) THYRISTOR SILICON PLANAR TYPE GM IGM Tj Tstg 5 7.8 65 (50 Hz) 20 0.5 0.05 5 -5 200 -40~125 -40~125 A A A A2s W W V V mA °C °C V Unit VDRM VRRM JEDEC JEITA TOSHIBA ― ― 13-7F1A Weight: 0.36 g (typ.) Note: Should be used with gate resistance as follows: Anode Gate RGK < = 330
2	USF5G48	Toshiba Semiconductor	TOSHIBA THYRISTOR SILICON PLANAR TYPE nt Peak Gate Power Dissipation Average Gate Power Dissition Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Strage Temperature Range (Note 1) 2 SYMBOL RATING 400 UNIT VDRM VRRM 600 V 500 VRSM 7
3	USF05G49	Toshiba Semiconductor	LOW POWER SWITCHING&CONTROLLER −40~125 V mA mA A A s A / µs W W V V mA °C °C 2 JEDEC JEITA TOSHIBA ― ― 13-5B1A Weight: 0.2 g (typ.) Note: Should be used with gate resistance as shown below. Note 1: di / dt Test condition: iG = 5mA, tgw = 10µs, tgr≤250ns MARKING Part No. (or
4	USF5G48	Toshiba Semiconductor	(USF5x48) THYRISTOR SILICON PLANAR TYPE nt Peak Gate Power Dissipation Average Gate Power Dissition Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Strage Temperature Range (Note 1) 2 SYMBOL RATING 400 UNIT VDRM VRRM 600 V 500 VRSM 7
5	USF5J48	Toshiba Semiconductor	(USF5x48) THYRISTOR SILICON PLANAR TYPE nt Peak Gate Power Dissipation Average Gate Power Dissition Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Strage Temperature Range (Note 1) 2 SYMBOL RATING 400 UNIT VDRM VRRM 600 V 500 VRSM 7
6	USF8G48	Toshiba Semiconductor	(USF8x48) MEDIUM POWER CONTROL APPLICATIONS RATING 400 UNIT VDRM VRRM 600 V USF8G48 SF8J48 USF8J48 500 VRSM 720 IT (AV) IT (RMS) ITSM I t di /dt PGM PG (AV) VFGM VRGM IGM Tj Tstg 2 V 8 12.6 120 (50Hz) 132 (60Hz) 72 100 5 0.5 10 −5 2 −40~125 −40~125 A A A A s A / µs W W V V A °C °C 2
7	USF5J48	Toshiba Semiconductor	TOSHIBA THYRISTOR SILICON PLANAR TYPE Power Dissition Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Strage Temperature Range (Note 1) 2 SYMBOL RATING 400 UNIT VDRM VRRM 600 V 500 VRSM 720 IT (AV) IT (RMS) ITSM I t di /dt PGM PG
8	USF10G48	Toshiba Semiconductor	Thyristor Average On−State Current R.M.S On−State Current Peak One Cycle Surge On−State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate V
9	USF10J48	Toshiba Semiconductor	Thyristor Average On−State Current R.M.S On−State Current Peak One Cycle Surge On−State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate V
10	USF3G48	Toshiba Semiconductor	Thyristor sipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range 2 SYMBOL RATING 400 UNIT SF3G48 USF3G48 SF3J48 USF3J48 SF3G48 USF3G48 SF3J48 USF3J48 VDRM VRRM V 600 500 VRSM
11	USF3J48	Toshiba Semiconductor	Thyristor sipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range 2 SYMBOL RATING 400 UNIT SF3G48 USF3G48 SF3J48 USF3J48 SF3G48 USF3G48 SF3J48 USF3J48 VDRM VRRM V 600 500 VRSM
12	USF5J49	Toshiba Semiconductor	(USF5x49) THYRISTOR SILICON PLANAR TYPE GM IGM Tj Tstg 5 7.8 65 (50 Hz) 20 0.5 0.05 5 -5 200 -40~125 -40~125 A A A A2s W W V V mA °C °C V Unit VDRM VRRM JEDEC JEITA TOSHIBA ― ― 13-7F1A Weight: 0.36 g (typ.) Note: Should be used with gate resistance as follows: Anode Gate RGK < = 330
13	USF8J48	Toshiba Semiconductor	(USF8x48) MEDIUM POWER CONTROL APPLICATIONS RATING 400 UNIT VDRM VRRM 600 V USF8G48 SF8J48 USF8J48 500 VRSM 720 IT (AV) IT (RMS) ITSM I t di /dt PGM PG (AV) VFGM VRGM IGM Tj Tstg 2 V 8 12.6 120 (50Hz) 132 (60Hz) 72 100 5 0.5 10 −5 2 −40~125 −40~125 A A A A s A / µs W W V V A °C °C 2