Toshiba Semiconductor TK2 fiche technique

No.	Partie #	Fabricant	Description
1	TK20J60U	Toshiba Semiconductor	N-Channel MOSFET 0.6 －0.1 123 1. Gate 2. Drain (heatsink) 3. Source JEDEC ⎯ JEITA SC-65 TOSHIBA 2-16C1B Weight : 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
2	K20J60U	Toshiba Semiconductor	TK20J60U 123 1. Gate 2. Drain(heat sink) 3. Source JEDEC ⎯ JEITA SC-65 TOSHIBA 2-16C1B Weight : 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperatur
3	TK25A20D	Toshiba Semiconductor	Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.047 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK25A20D 1: Gate (G) 2: Drain
4	TK2P60D	Toshiba Semiconductor	Silicon N-Channel MOSFET 0.15 1. GATE 2. DRAIN （HEAT SINK） 3. SOURSE JEDEC ⎯ JEITA ⎯ TOSHIBA 2-7J1B Weight : 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature,
5	TK2Q60D	Toshiba Semiconductor	Silicon N-Channel MOSFET DRAIN（HEAT SINK） 3. SOURCE JEDEC ― JEITA ― TOSHIBA 2-7J2B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause th
6	TK25A10K3	Toshiba Semiconductor	MOSFET of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within t
7	TK20A60W	Toshiba Semiconductor	Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK20A60W T
8	TK20G60W	Toshiba Semiconductor	Silicon N-Channel MOSFET (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2:
9	TK25E06K3	Toshiba Semiconductor	Silicon N-Channel MOSFET (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 14 mΩ (typ.) High forward transfer admittance: \|Yfs\| = 50 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packagi
10	TK20A60W5	Toshiba Semiconductor	Silicon N-Channel MOSFET (1) (2) (3) (4) Fast reverse recovery time: trr = 110 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.15 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1
11	TK2A65D	Toshiba Semiconductor	Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 2.8 Ω (typ.) (2) High forward transfer admittance: \|Yfs\| = 1.5 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packag
12	TK20C60W	Toshiba Semiconductor	Silicon N-Channel MOSFET (1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK20C60W 1
13	TK20E60W	Toshiba Semiconductor	Silicon N-Channel MOSFET (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2:
14	TK20J60W5	Toshiba Semiconductor	Silicon N-Channel MOSFET (1) (2) (3) (4) Fast reverse recovery time: trr = 110 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.15 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1
15	TK28N65W	Toshiba Semiconductor	Silicon N-Channel MOSFET (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.094 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.6 mA) 3. Packaging and Internal Circuit 1: Gate
16	TK28N65W5	Toshiba Semiconductor	Silicon N-Channel MOSFET (1) (2) (3) (4) Fast reverse recovery time: trr = 115 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.11 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.