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Toshiba Semiconductor |
1.9GHz BAND ATTENUATOR (PHS DIGITAL CORDLESS TELEPHONE) |
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Toshiba Semiconductor |
GaAs Linear Integrated Circuit GaAs Monolithic · · Fewer external parts: On-chip inverter circuit Low insertion Loss: LOSS = 0.45dB (typ.) @1.0 GHz = 0.55dB (typ.) @2.5 GHz High isolation: ISL = 25dB (typ.) @1.0 GHz = 24dB (typ.) @2.5 GHz Low voltage operation: VCON = 0 V/2.7 V Small package: TU6 |
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Toshiba Semiconductor |
TV TUNER/ UHF RF AMPLIFIER APPLICATIONS) |
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Toshiba Semiconductor |
1.9GHz BAND POWER AMPLIFIER MODULE (PHS DIGITAL CORDLESS TELEPHONE) |
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Toshiba Semiconductor |
1.9 GHz Band Power Amplifier l Positive voltage operation: Vd = 3 V, Vg = 0 or 1 V l Low current consumption: It = 130 mA (typ.) l Small package: SM8 package (2.9 × 2.8 × 1.1mm) l Low cost: Can be achieved minimum function. Pin Assignment (top view) Marking TG2006F Weight: 0.0 |
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Toshiba Semiconductor |
1.9GHz BAND ANTENNA SWITCH (PHS DIGITAL CORDLESS TELEPHONE) |
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Toshiba Semiconductor |
1.9GHz BAND ANTENNA SWITCH (PHS DIGITAL CORDLESS TELEPHONE) |
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Toshiba Semiconductor |
RF SPDT SWITCH (APPLICATION : PHS) |
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Toshiba Semiconductor |
GaAs Linear Integrated Circuit GaAs Monolithic www.DataSheet4U.com · · · · · Low insertion Loss: LOSS = 0.5dB (typ.) @1.0 GHz = 0.7dB (typ.) @2.5 GHz High isolation: ISL = 25dB (typ.) @1.0 GHz = 23dB (typ.) @2.5 GHz High linearly: Pi1dB = 28dBmW (typ.) @2.5 GHz Low voltage operation: VCON = 0 V |
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Toshiba Semiconductor |
RF SPDT Switch · · · · Low insertion Loss: LOSS = 0.4dB (typ.) High isolation: ISL = 30dB (typ.) Low voltage operation: VC = 0 V/2.5 V Small package: TU6 package (2.0 × 1.25 × 0.6 mm) Weight: 0.008 g (typ.) Pin Connection, Marking (top view) VC1 6 RFcom 5 VC2 4 U |
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