Toshiba Semiconductor SM1 fiche technique

No.	Partie #	Fabricant	Description
1	M1J43	Toshiba Semiconductor	SM1J43 ltage II III IV I Gate Trigger Current II III IV Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Thermal Resistance Thermal Resistance VTM VGD IH Rth (j−c) Rth (j−a) ITM = 1.5A VD = Rated, Tc = 125°C VD = 12V, ITM = 1A Junction to Case
2	M16JZ47	Toshiba Semiconductor	SM16JZ47A µs W W V A °C °C V 2 JEDEC JEITA TOSHIBA Weight: 1.7g ― ― 13−10H1A Note 1: di / dt Test condition VDRM = 0.5 × Rated ITM ≤ 25A tgw ≥ 10µs tgr ≤ 250ns iGP = IGT × 2.0 1 2001-07-13 SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A ELECTRICAL CHARACTERISTICS
3	M10LZ47	Toshiba Semiconductor	SM10LZ47 TM ≤ 15A, tgw ≥ 10µs, tgr ≤ 250ns, igp = IGT × 2.0 1 2001-07-10 SM10LZ47 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I Gate Trigger Voltage II III I Gate Trigger Current II III Peak On−State Voltage www.
4	SM16JZ47	Toshiba Semiconductor	BI?DIRECTIONAL TRIODE THYRISTOR JEDEC JEITA TOSHIBA Weight: 1.7g ― ― 13−10H1A Note 1: di / dt Test condition VDRM = 0.5 × Rated ITM ≤ 25A tgw ≥ 10µs tgr ≤ 250ns iGP = IGT × 2.0 1 2001-07-13 SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTE
5	M12JZ47	Toshiba Semiconductor	SM12JZ47 −40~125 −40~125 1500 A A A s A / µs W W V A °C °C V 2 JEDEC JEITA TOSHIBA Weight: 1.7g ― ― 13−10H1A Note 1: di / dt test condition VDRM = 0.5 × Rated ITM ≤ 17A tgw ≥ 10µs tgr ≤ 250ns igp = IGT × 2.0 1 2001-07-10 www.DataSheet4U.com SM12GZ47,
6	SM12GZ47A	Toshiba Semiconductor	(SM12xxZ47x) AC POWER CONTROL APPLICATIONS A A A s A / µs W W V A °C °C V 2 JEDEC JEITA TOSHIBA ― ― 13-10H1A Weight: 1.7 g (typ.) Note 1: di / dt test condition VDRM = 0.5 × Rated ITM ≤ 17A tgw ≥ 10µs tgr ≤ 250ns igp = IGT × 2.0 1 2004-07-06 SM12GZ47, SM12JZ47, SM12GZ47A, SM12JZ47A E
7	SM16JZ47A	Toshiba Semiconductor	BI?DIRECTIONAL TRIODE THYRISTOR W V A °C °C V JEDEC JEITA TOSHIBA Weight: 1.7g ― ― 13−10H1A Note 1: di / dt Test condition VDRM = 0.5 × Rated ITM ≤ 25A tgw ≥ 10µs tgr ≤ 250ns iGP = IGT × 2.0 1 2001-07-13 SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A ELECTRICAL CHARACTERISTICS (Ta
8	SM12JZ47	Toshiba Semiconductor	(SM12xxZ47x) AC POWER CONTROL APPLICATIONS A A A s A / µs W W V A °C °C V 2 JEDEC JEITA TOSHIBA ― ― 13-10H1A Weight: 1.7 g (typ.) Note 1: di / dt test condition VDRM = 0.5 × Rated ITM ≤ 17A tgw ≥ 10µs tgr ≤ 250ns igp = IGT × 2.0 1 2004-07-06 SM12GZ47, SM12JZ47, SM12GZ47A, SM12JZ47A E
9	SM10LZ47	Toshiba Semiconductor	AC POWER CONTROL APPLICATIONS TM ≤ 15A, tgw ≥ 10µs, tgr ≤ 250ns, igp = IGT × 2.0 1 2001-07-10 SM10LZ47 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I Gate Trigger Voltage II III I Gate Trigger Current II III Peak On−State Voltage www.
10	SM12G45	Toshiba Semiconductor	TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE M12J45A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I SM12G45 SM12J45 Gate Trigger Voltage SM12G45A SM12J45A II III IV I II III IV I SM12G45 SM12J45 Gate Trigger Current SM12G45A SM12J45A II III IV I II III
11	SM12G45A	Toshiba Semiconductor	TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE M12J45A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I SM12G45 SM12J45 Gate Trigger Voltage SM12G45A SM12J45A II III IV I II III IV I SM12G45 SM12J45 Gate Trigger Current SM12G45A SM12J45A II III IV I II III
12	SM12J45	Toshiba Semiconductor	TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE M12J45A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I SM12G45 SM12J45 Gate Trigger Voltage SM12G45A SM12J45A II III IV I II III IV I SM12G45 SM12J45 Gate Trigger Current SM12G45A SM12J45A II III IV I II III
13	SM12J45A	Toshiba Semiconductor	TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE M12J45A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I SM12G45 SM12J45 Gate Trigger Voltage SM12G45A SM12J45A II III IV I II III IV I SM12G45 SM12J45 Gate Trigger Current SM12G45A SM12J45A II III IV I II III
14	SM16G45	Toshiba Semiconductor	AC POWER CONTROL APPLICATIONS ive Peak Off−State Current I Gate Trigger Voltage II III IV I SM16G45 SM16J45 Gate Trigger Current SM16G45A SM16J45A II III IV I II III IV Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Critical Rate of Rise of Off−State Voltage at Co
15	SM16G45A	Toshiba Semiconductor	AC POWER CONTROL APPLICATIONS ive Peak Off−State Current I Gate Trigger Voltage II III IV I SM16G45 SM16J45 Gate Trigger Current SM16G45A SM16J45A II III IV I II III IV Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Critical Rate of Rise of Off−State Voltage at Co
16	SM16GZ47	Toshiba Semiconductor	BI−DIRECTIONAL TRIODE THYRISTOR JEDEC JEITA TOSHIBA Weight: 1.7g ― ― 13−10H1A Note 1: di / dt Test condition VDRM = 0.5 × Rated ITM ≤ 25A tgw ≥ 10µs tgr ≤ 250ns iGP = IGT × 2.0 1 2001-07-13 SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTE
17	SM16GZ51	Toshiba Semiconductor	AC POWER CONTROL APPLICATIONS 2.0g ― ― 13−16A1A Note 1: di / dt test condition VDRM = 0.5 × Rated, ITM ≤ 25 A, tgw ≥ 10 µs, tgr ≤ 250 ns, igp = IGT × 2.0 1 2001-07-10 SM16GZ51,SM16JZ51 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I
18	SM16J45	Toshiba Semiconductor	AC POWER CONTROL APPLICATIONS ive Peak Off−State Current I Gate Trigger Voltage II III IV I SM16G45 SM16J45 Gate Trigger Current SM16G45A SM16J45A II III IV I II III IV Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Critical Rate of Rise of Off−State Voltage at Co
19	SM16J45A	Toshiba Semiconductor	AC POWER CONTROL APPLICATIONS ive Peak Off−State Current I Gate Trigger Voltage II III IV I SM16G45 SM16J45 Gate Trigger Current SM16G45A SM16J45A II III IV I II III IV Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Critical Rate of Rise of Off−State Voltage at Co
20	SM16JZ51	Toshiba Semiconductor	AC POWER CONTROL APPLICATIONS 2.0g ― ― 13−16A1A Note 1: di / dt test condition VDRM = 0.5 × Rated, ITM ≤ 25 A, tgw ≥ 10 µs, tgr ≤ 250 ns, igp = IGT × 2.0 1 2001-07-10 SM16GZ51,SM16JZ51 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I