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Toshiba Semiconductor |
High Power Switching Applications Motor Control Applications SB1X Package Dimensions: TOSHIBA 2-108G1A Unit: mm 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) Open 4. 10. 16. GND (U) FO (W) IN (B) 5. 11. 17. VD (V) IN (W) IN (X) 6. 12. 1 |
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Toshiba Semiconductor |
Intelligent Power Module • The 4th generation trench gate thin wafer NPT IGBT is adopted. • FRD is built in. • The level shift circuit by high-voltage IC is built in. • The simplification of a high side driver power supply is possible by the bootstrap system. • Short circuit |
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Toshiba Semiconductor |
TOSHIBA Intelligent Power Module Silicon N Channel IGBT 14. IN (V) FO (L) P 1 2001-11-13 MIG150J7CSB1W Package Dimensions: TOSHIBA 2-108G1A Unit: mm 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) Open 4. 10. 16. GND (U) FO (W) IN ( |
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Toshiba Semiconductor |
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
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Toshiba Semiconductor |
TOSHIBA Intelligent Power Module Silicon N Channel IGBT perature range Isolation voltage Screw torque Condition P-N power terminal ― Tc = 25°C, DC Tc = 25°C, DC Tc = 25°C ― VD-GND terminal IN-GND terminal FO-GND (L) terminal FO sink current ― ― AC 1 minute, M5 Symbol VCC VCES IC IF PC Tj VD VIN VFO IFO TC |
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Toshiba Semiconductor |
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
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Toshiba Semiconductor |
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
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Toshiba Semiconductor |
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
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Toshiba Semiconductor |
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS |
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Toshiba Semiconductor |
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
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Toshiba Semiconductor |
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
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Toshiba Semiconductor |
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
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Toshiba Semiconductor |
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
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Toshiba Semiconductor |
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT |
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Toshiba Semiconductor |
TOSHIBA Intelligent Power Module Silicon N Channel IGBT D terminal IN−GND terminal FO−GND (L) terminal FO sink current ― ― Symbol VCC VCES IC IF PC Tj VD VIN VFO IFO TC Tstg VISO ― www.DataSheet4U.com Ratings 450 600 300 300 1200 150 20 20 20 14 −20~+100 −40~+125 2500 3 Unit V V A A W °C V V V mA °C °C |
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Toshiba Semiconductor |
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
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Toshiba Semiconductor |
TOSHIBA Intelligent Power Module Silicon N Channel IGBT ) 5. 11. 17. VD (V) IN (W) IN (X) 6. 12. 18. FO (V) GND (W) IN (Y) 2 2001-11-13 MIG100J7CSB1W Signal Terminal Layout Unit: mm 1. 7. 13. 19. VD (U) IN (V) VD (L) IN (Z) 2. 8. 14. 20. FO (U) GND (V) FO (L) GND (L) 3. 9. 15. IN (U) VD (W) O |
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Toshiba Semiconductor |
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
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Toshiba Semiconductor |
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
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Toshiba Semiconductor |
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
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