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Toshiba Semiconductor |
SM16JZ47A µs W W V A °C °C V 2 JEDEC JEITA TOSHIBA Weight: 1.7g ― ― 13−10H1A Note 1: di / dt Test condition VDRM = 0.5 × Rated ITM ≤ 25A tgw ≥ 10µs tgr ≤ 250ns iGP = IGT × 2.0 1 2001-07-13 SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A ELECTRICAL CHARACTERISTICS |
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Toshiba Semiconductor |
BI?DIRECTIONAL TRIODE THYRISTOR JEDEC JEITA TOSHIBA Weight: 1.7g ― ― 13−10H1A Note 1: di / dt Test condition VDRM = 0.5 × Rated ITM ≤ 25A tgw ≥ 10µs tgr ≤ 250ns iGP = IGT × 2.0 1 2001-07-13 SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTE |
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Toshiba Semiconductor |
BI?DIRECTIONAL TRIODE THYRISTOR W V A °C °C V JEDEC JEITA TOSHIBA Weight: 1.7g ― ― 13−10H1A Note 1: di / dt Test condition VDRM = 0.5 × Rated ITM ≤ 25A tgw ≥ 10µs tgr ≤ 250ns iGP = IGT × 2.0 1 2001-07-13 SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A ELECTRICAL CHARACTERISTICS (Ta |
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Toshiba Semiconductor |
AC POWER CONTROL APPLICATIONS ive Peak Off−State Current I Gate Trigger Voltage II III IV I SM16G45 SM16J45 Gate Trigger Current SM16G45A SM16J45A II III IV I II III IV Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Critical Rate of Rise of Off−State Voltage at Co |
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Toshiba Semiconductor |
AC POWER CONTROL APPLICATIONS ive Peak Off−State Current I Gate Trigger Voltage II III IV I SM16G45 SM16J45 Gate Trigger Current SM16G45A SM16J45A II III IV I II III IV Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Critical Rate of Rise of Off−State Voltage at Co |
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Toshiba Semiconductor |
BI−DIRECTIONAL TRIODE THYRISTOR JEDEC JEITA TOSHIBA Weight: 1.7g ― ― 13−10H1A Note 1: di / dt Test condition VDRM = 0.5 × Rated ITM ≤ 25A tgw ≥ 10µs tgr ≤ 250ns iGP = IGT × 2.0 1 2001-07-13 SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTE |
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Toshiba Semiconductor |
AC POWER CONTROL APPLICATIONS 2.0g ― ― 13−16A1A Note 1: di / dt test condition VDRM = 0.5 × Rated, ITM ≤ 25 A, tgw ≥ 10 µs, tgr ≤ 250 ns, igp = IGT × 2.0 1 2001-07-10 SM16GZ51,SM16JZ51 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I |
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Toshiba Semiconductor |
AC POWER CONTROL APPLICATIONS ive Peak Off−State Current I Gate Trigger Voltage II III IV I SM16G45 SM16J45 Gate Trigger Current SM16G45A SM16J45A II III IV I II III IV Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Critical Rate of Rise of Off−State Voltage at Co |
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Toshiba Semiconductor |
AC POWER CONTROL APPLICATIONS ive Peak Off−State Current I Gate Trigger Voltage II III IV I SM16G45 SM16J45 Gate Trigger Current SM16G45A SM16J45A II III IV I II III IV Peak On−State Voltage Gate Non−Trigger Voltage Holding Current Critical Rate of Rise of Off−State Voltage at Co |
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Toshiba Semiconductor |
AC POWER CONTROL APPLICATIONS 2.0g ― ― 13−16A1A Note 1: di / dt test condition VDRM = 0.5 × Rated, ITM ≤ 25 A, tgw ≥ 10 µs, tgr ≤ 250 ns, igp = IGT × 2.0 1 2001-07-10 SM16GZ51,SM16JZ51 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I |
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Toshiba Semiconductor |
AC POWER CONTROL APPLICATIONS RM 600 IT (RMS) ITSM I t di /dt PGM PG (AV) VGM IGM Tj Tstg 2 UNIT Repetitive Peak Off-State Voltage V R.M.S On-State Current Peak One Cycle Surge On-State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On-State Current (Note 1 |
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Toshiba Semiconductor |
AC POWER CONTROL APPLICATIONS RM 600 IT (RMS) ITSM I t di /dt PGM PG (AV) VGM IGM Tj Tstg 2 UNIT Repetitive Peak Off-State Voltage V R.M.S On-State Current Peak One Cycle Surge On-State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On-State Current (Note 1 |
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Toshiba Semiconductor |
BI?DIRECTIONAL TRIODE THYRISTOR W V A °C °C V JEDEC JEITA TOSHIBA Weight: 1.7g ― ― 13−10H1A Note 1: di / dt Test condition VDRM = 0.5 × Rated ITM ≤ 25A tgw ≥ 10µs tgr ≤ 250ns iGP = IGT × 2.0 1 2001-07-13 SM16GZ47,SM16JZ47,SM16GZ47A,SM16JZ47A ELECTRICAL CHARACTERISTICS (Ta |
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Toshiba Semiconductor |
AC POWER CONTROL APPLICATIONS RM 600 IT (RMS) ITSM I t di /dt PGM PG (AV) VGM IGM Tj Tstg 2 UNIT Repetitive Peak Off-State Voltage V R.M.S On-State Current Peak One Cycle Surge On-State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On-State Current (Note 1 |
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Toshiba Semiconductor |
AC POWER CONTROL APPLICATIONS RM 600 IT (RMS) ITSM I t di /dt PGM PG (AV) VGM IGM Tj Tstg 2 UNIT Repetitive Peak Off-State Voltage V R.M.S On-State Current Peak One Cycle Surge On-State Current (Non-Repetitive) I t Limit Value Critical Rate of Rise of On-State Current (Note 1 |
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Toshiba Semiconductor |
500mA CMOS Ultra Low Drop-Out Regulator include over-current protection, over-temperature protection, Under-voltage-lockout and Auto-discharge function. The TCR5AM series are offered in the ultra small plastic mold package DFN5B (1.2 mm x 1.2 mm; t 0.38 mm). As small ceramic input and outp |
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