| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
2SK2718 pplication of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) ar |
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Toshiba Semiconductor |
2SK2746 (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating co |
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Toshiba Semiconductor |
2SK2700 r heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/ |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET istance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 2.78 62.5 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 43.6 |
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Toshiba Semiconductor |
N-Channel MOS Type Field Effect Transistor uously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating t |
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Toshiba Semiconductor |
2SK2741 sistance, channel to ambient Symbol Rth (ch−a) Max 50 Unit °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm) Note 3: VDD = 25 V, Tch = 25°C ( |
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Toshiba Semiconductor |
2SK2789 s Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 2.08 83.3 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 25 V, |
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Toshiba Semiconductor |
N-Channel MOSFET (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating c |
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Toshiba Semiconductor |
N-Channel MOSFET ight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the |
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Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor s Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 2.08 83.3 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 25 V, |
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Toshiba Semiconductor |
N-Channel MOS Type Field Effect Transistor uously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating t |
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Toshiba Semiconductor |
Silicon N-Channel MOS Type Field Effect Transistor mbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 2.08 83.3 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = |
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Toshiba Semiconductor |
2SK2733 mbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 2.08 83.3 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = |
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Toshiba Semiconductor |
N-Channel MOSFET sistance, channel to ambient Symbol Rth (ch−a) Max 50 Unit °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm) Note 3: VDD = 25 V, Tch = 25°C ( |
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Toshiba Semiconductor |
N-Channel MOSFET Characteristics Symbol Max Unit Thermal resistance, channel to ambient Rth (ch−a) 50 °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm) No |
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Toshiba Semiconductor |
N-Channel MOSFET (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating co |
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Toshiba Semiconductor |
N-Channel MOSFET C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Weight: 0.36 g (typ.) 1.7 ± 0.2 6.8 MAX. °C °C 0.6 MAX. 5.5 ± 0.2 Note: Using continuously under heavy |
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Toshiba Semiconductor |
2SK2782 |
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Toshiba Semiconductor |
N-Channel MOSFET r heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/ |
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Toshiba Semiconductor |
N-Channel MOS Type Field Effect Transistor pplication of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) ar |
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