| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Toshiba Semiconductor |
2SK2232 sly under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temp |
|
|
|
|
Toshiba Semiconductor |
2SK2200 ously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating te |
|
|
|
|
Toshiba Semiconductor |
N-Channel MOSFET Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 6.25 125 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 25 V, Tc |
|
|
|
|
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
|
|
|
Toshiba Semiconductor |
2SK2267 ntinuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operati |
|
|
|
|
Toshiba Semiconductor |
2SK2266 ymbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 1.92 83.3 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch |
|
|
|
|
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor ously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating te |
|
|
|
|
Toshiba Semiconductor |
N-CHANNEL MOS TYPE TRANSISTOR ntinuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operati |
|
|
|
|
Toshiba Semiconductor |
N-Channel MOSFET |
|
|
|
|
Toshiba Semiconductor |
2SK2237 |
|
|
|
|
Toshiba Semiconductor |
2SK2231 |
|
|
|
|
Toshiba Semiconductor |
Silicon N-Channel MOS Type Field Effect Transistor /current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum |
|
|
|
|
Toshiba Semiconductor |
Silicon N-Channel MOSFET ontinuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat |
|
|
|
|
Toshiba Semiconductor |
N-Channel MOSFET Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if t |
|
|
|
|
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor ymbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 1.92 83.3 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch |
|
|
|
|
Toshiba Semiconductor |
Silicon N Channel Dual Gate MOS Type FET |
|
|
|
|
Toshiba Semiconductor |
N-Channel MOSFET mal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 1.25 50 Unit °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below |
|
|
|
|
Toshiba Semiconductor |
Silicon N-Channel MOSFET nder heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperatu |
|
|
|
|
Toshiba Semiconductor |
Silicon N-Channel MOSFET °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-02-06 Electrical Characteristics (Ta = 25°C) Characteristics Sym |
|
|
|
|
Toshiba Semiconductor |
Silicon N-Channel MOSFET e/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliabi |
|