| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
2SC5404 |
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Toshiba Semiconductor |
2SC5411 tter Saturation Voltage Transition Frequency Collector Output Capacitance Switching Time Storage Time Fall Time ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob tstg tf VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VC |
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Toshiba Semiconductor |
NPN TRANSISTOR |
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Toshiba Semiconductor |
2SC5422 e Time Fall Time YMBOL ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob tstg tf TEST CONDITION VCB = 1700 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 11 A IC = 11 A, IB = 2.75 A IC = 11 A, IB = 2. |
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Toshiba Semiconductor |
NPN TRANSISTOR tput Capacitance Switching Time Storage Time Fall Time ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob tstg tf VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 7 A IC = 7 A, IB = 1.75 A |
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Toshiba Semiconductor |
NPN TRANSISTOR or Output Capacitance Switching Time Storage Time Fall Time SYMBOL ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob tstg tf TEST CONDITION VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 11 |
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Toshiba Semiconductor |
NPN TRANSISTOR ctor-emitter breakdown voltage DC current gain Collector emitter saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CBO V (BR) CEO hFE VCE (sat) VBE (sat) VCB = 480 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE |
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Toshiba Semiconductor |
NPN TRANSISTOR |
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Toshiba Semiconductor |
Octal Bus Buffer · High-speed operation ........................ tpd = 4.8 ns (typ.) · Symmetrical output impedance ....... IOH = −15 mA (max) IOL = 48 mA (max) · Low power dissipation ...................... ICCD = 8 mA (typ.) ICCZ = 10 mA (typ.) · Operating temperat |
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Toshiba Semiconductor |
Octal Bus Buffer • High speed: tpd = 4.0 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 8 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission |
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Toshiba Semiconductor |
Octal Bus Buffer • High speed: tpd = 4.0 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 8 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission |
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Toshiba Semiconductor |
Octal Bus Buffer • High speed: tpd = 4.0 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 8 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission |
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Toshiba Semiconductor |
2SC5446 ge Time Switching Time Fall Time Storage Time Fall Time SYMBOL TEST CONDITION ICBO IEBO V (BR) CEO hFE (1) hFE (2) hFE (3) VCE (sat) VBE (sat) fT Cob tstg (1) tf (1) tstg (2) tf (2) VCB = 1700 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE |
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Toshiba Semiconductor |
Octal Bus Buffer • High speed: tpd = 4.0 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 8 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission |
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Toshiba Semiconductor |
NPN TRANSISTOR ven if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions |
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Toshiba Semiconductor |
NPN TRANSISTOR ly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precaut |
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Toshiba Semiconductor |
NPN TRANSISTOR ings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure |
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Toshiba Semiconductor |
NPN TRANSISTOR tor Reliability Handbook (“Handling Weight: 2.4 mg (typ.) Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Microwave Characteristics (Ta = 25°C) Characte |
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Toshiba Semiconductor |
NPN TRANSISTOR ign the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 h |
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Toshiba Semiconductor |
Octal Bus Buffer • High speed: tpd = 4.0 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 8 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • Symmetrical output impedance: |IOH| = IOL = 24 mA (min) Capability of driving 50 Ω transmission |
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