| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
Silicon NPN Transistor esign the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 |
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Toshiba Semiconductor |
NPN TRANSISTOR esign the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 |
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Toshiba Semiconductor |
NPN TRANSISTOR |
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Toshiba Semiconductor |
NPN TRANSISTOR significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Hand |
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Toshiba Semiconductor |
NPN Transistor (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: VCEO = 50 V (3) High collector current: IC = 150 mA (max) (4) High hFE: hFE = 120 to 700 (5) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) |
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Toshiba Semiconductor |
NPN TRANSISTOR A VCE (sat) IC = 100 mA, IB = 10 mA fT VCE = 10 V, IC = 1 mA Cob VCB = 10 V, IE = 0, f = 1 MHz Note: hFE classification Y (Y): 120~240, GR (G): 200~400 ( ) marking symbol Marking JEDEC ― JEITA ― TOSHIBA 2-2HA1A Weight: 2.3 mg (typ.) Min |
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Toshiba Semiconductor |
NPN TRANSISTOR |
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Toshiba Semiconductor |
CMOS 4-BIT MICROCONTROLLER |
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