| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
2SC1923 A (Note) Cre fT Cc･rbb’ NF Gpe VCE = 6 V, f = 1 MHz VCE = 6 V, IC = 1 mA VCE = 6 V, IE = -1 mA, f = 30 MHz VCE = 6 V, IE = -1 mA, f = 100 MHz, Figure 1 Note: hFE classification R: 40~80, O: 70~140, Y: 100~200 (* NF = 5.0dB max) Min Typ. Max Unit |
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Toshiba Semiconductor |
PNP Transistor hFE (2) VCE = 6 V, IC = 400 mA (Note) VCE (sat) VBE fT Cob IC = 100 mA, IB = 10 mA VCE = 1 V, IC = 100 mA VCE = 6 V, IC = 20 mA VCB = 6 V, IE = 0, f = 1 MHz Note: hFE (1) classification O: 70~140, Y: 120~240, GR: 200~400 hFE (2) classification O: |
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Toshiba Semiconductor |
Silicon NPN Transistor A (Note) Cre fT Cc･rbb’ NF Gpe VCE = 6 V, f = 1 MHz VCE = 6 V, IC = 1 mA VCE = 6 V, IE = -1 mA, f = 30 MHz VCE = 6 V, IE = -1 mA, f = 100 MHz, Figure 1 Note: hFE classification R: 40~80, O: 70~140, Y: 100~200 (* NF = 5.0dB max) Min Typ. Max Unit |
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