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Toshiba Semiconductor B10 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
2SB1015A

Toshiba Semiconductor
Silicon PNP Transistor
dition ICBO VCB = -60 V, IE = 0 IEBO VEB = -7 V, IC = 0 V (BR) CEO IC = -50 mA, IB = 0 hFE (1) (Note) VCE = -5 V, IC = -0.5 A hFE (2) VCE (sat) VBE fT Cob VCE = -5 V, IC = -3 A IC = -3 A, IB = -0.3 A VCE = -5 A, IC = -0.5 A VCE = -5 V, IC =
Datasheet
2
B1020A

Toshiba Semiconductor
2SB1020A
Datasheet
3
2SB1015

Toshiba Semiconductor
Silicon PNP Transistor
. Low Collector Saturation Vol tage : VC E(sat)=-1.0V(Max.) at Ic=-3A, I B=-0.3A . Collector Power Dissipation : Pc=25W (Tc=25°C) . Complementary to 2SD1406 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em
Datasheet
4
B1015A

Toshiba Semiconductor
2SB1015A
dition ICBO VCB = -60 V, IE = 0 IEBO VEB = -7 V, IC = 0 V (BR) CEO IC = -50 mA, IB = 0 hFE (1) (Note) VCE = -5 V, IC = -0.5 A hFE (2) VCE (sat) VBE fT Cob VCE = -5 V, IC = -3 A IC = -3 A, IB = -0.3 A VCE = -5 A, IC = -0.5 A VCE = -5 V, IC =
Datasheet
5
2SB1016A

Toshiba Semiconductor
Silicon PNP Transistor
lute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and e
Datasheet
6
U1ZB10

Toshiba Semiconductor
CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS
61.2 67.5 73.8 90 99 135 162 180 190 200 198 210 220 216 230 240 ZENER MEASUREIMPEDANCE MENT rd (Ω) CURRENT IZ (mA) TYP. MAX MAX 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 43 47 51 68 75 82 100 110 150 180 200 200 210 220 220 230 240 2
Datasheet
7
2SB1018A

Toshiba Semiconductor
TRANSISTOR
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual
Datasheet
8
2SB1020A

Toshiba Semiconductor
Silicon PNP Transistor
nificantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Datasheet
9
2SB1067

Toshiba Semiconductor
PNP Transistor
ility significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (
Datasheet
10
U1ZB100

Toshiba Semiconductor
CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS
61.2 67.5 73.8 90 99 135 162 180 190 200 198 210 220 216 230 240 ZENER MEASUREIMPEDANCE MENT rd (Ω) CURRENT IZ (mA) TYP. MAX MAX 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 43 47 51 68 75 82 100 110 150 180 200 200 210 220 220 230 240 2
Datasheet
11
TB1012F

Toshiba Semiconductor
CR TIMER
Datasheet
12
TB1031N

Toshiba Semiconductor
INTERFACE DRIVER IC
Datasheet
13
TB1010F

Toshiba Semiconductor
CR TIMER
Datasheet



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