| No. | Partie # | Fabricant | Description | Fiche Technique |
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Toshiba Semiconductor |
2SB1375 (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) |
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Toshiba Semiconductor |
2SB1640 (sat) VBE fT Cob Test Condition VCB = −60 V, IE = 0 VEB = −7 V, IC = 0 IC = −50 mA, IB = 0 VCE = −5 V, IC = −0.5 A VCE = −5 V, IC = −2 A IC = −2 A, IB = −0.2 A VCE = −5 V, IC = −0.5 A VCE = −5 V, IC = −0.5 A VCB = −10 V, IE = 0, f = 1 MHz Min ― ― −60 |
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Toshiba Semiconductor |
Silicon PNP Transistor dition ICBO VCB = -60 V, IE = 0 IEBO VEB = -7 V, IC = 0 V (BR) CEO IC = -50 mA, IB = 0 hFE (1) (Note) VCE = -5 V, IC = -0.5 A hFE (2) VCE (sat) VBE fT Cob VCE = -5 V, IC = -3 A IC = -3 A, IB = -0.3 A VCE = -5 A, IC = -0.5 A VCE = -5 V, IC = |
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Toshiba Semiconductor |
2SB1020A |
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Toshiba Semiconductor |
Silicon PNP Transistor (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) |
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Toshiba Semiconductor |
2SB1429 |
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Toshiba Semiconductor |
Silicon PNP Transistor . Low Collector Saturation Vol tage : VC E(sat)=-1.0V(Max.) at Ic=-3A, I B=-0.3A . Collector Power Dissipation : Pc=25W (Tc=25°C) . Complementary to 2SD1406 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em |
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Toshiba Semiconductor |
PNP Transistor and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2006-11 |
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Toshiba Semiconductor |
PNP Transistor |
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Toshiba Semiconductor |
2SB1015A dition ICBO VCB = -60 V, IE = 0 IEBO VEB = -7 V, IC = 0 V (BR) CEO IC = -50 mA, IB = 0 hFE (1) (Note) VCE = -5 V, IC = -0.5 A hFE (2) VCE (sat) VBE fT Cob VCE = -5 V, IC = -3 A IC = -3 A, IB = -0.3 A VCE = -5 A, IC = -0.5 A VCE = -5 V, IC = |
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Toshiba Semiconductor |
Silicon PNP Transistor lute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and e |
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Toshiba Semiconductor |
PNP Transistor |
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Toshiba Semiconductor |
TRANSISTOR temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual |
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Toshiba Semiconductor |
2SB1594 |
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Toshiba Semiconductor |
Silicon PNP Transistor nificantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling |
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Toshiba Semiconductor |
PNP Transistor ility significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( |
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Toshiba Semiconductor |
TRANSISTOR |
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Toshiba Semiconductor |
Silicon PNP Transistor (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Metho |
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Toshiba Semiconductor |
Silicon PNP Transistor |
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Toshiba Semiconductor |
TRANSISTOR |
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